Piezoresistance in Defect-Engineered Silicon

H. Li; A. Thayil; C. T.K. Lew; M. Filoche; B. C. Johnson; J. C. McCallum; S. Arscott; A. C.H. Rowe

doi:10.1103/PhysRevApplied.15.014046

Piezoresistance in Defect-Engineered Silicon

H. Li
, A. Thayil
, C. T.K. Lew
, M. Filoche
, B. C. Johnson
, J. C. McCallum
, S. Arscott
, A. C.H. Rowe

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias.

langue originale	Anglais
Numéro d'article	014046
journal	Physical Review Applied
Volume	15
Numéro de publication	1
Les DOIs	https://doi.org/10.1103/PhysRevApplied.15.014046
état	Publié - 1 janv. 2021

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10.1103/PhysRevApplied.15.014046

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@article{df4dcd043dba439bb2fe7a1e225e395d,

title = "Piezoresistance in Defect-Engineered Silicon",

abstract = "The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias.",

author = "H. Li and A. Thayil and Lew, \{C. T.K.\} and M. Filoche and Johnson, \{B. C.\} and McCallum, \{J. C.\} and S. Arscott and Rowe, \{A. C.H.\}",

note = "Publisher Copyright: {\textcopyright} PZR π coefficient is π≈65×10-11 Pa-1, similar to the value obtained in charge-neutral",

year = "2021",

month = jan,

day = "1",

doi = "10.1103/PhysRevApplied.15.014046",

language = "English",

volume = "15",

journal = "Physical Review Applied",

issn = "2331-7019",

number = "1",

}

TY - JOUR

T1 - Piezoresistance in Defect-Engineered Silicon

AU - Li, H.

AU - Thayil, A.

AU - Lew, C. T.K.

AU - Filoche, M.

AU - Johnson, B. C.

AU - McCallum, J. C.

AU - Arscott, S.

AU - Rowe, A. C.H.

PY - 2021/1/1

Y1 - 2021/1/1

N2 - The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias.

AB - The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias.

UR - https://www.scopus.com/pages/publications/85099781277

U2 - 10.1103/PhysRevApplied.15.014046

DO - 10.1103/PhysRevApplied.15.014046

M3 - Article

AN - SCOPUS:85099781277

SN - 2331-7019

VL - 15

JO - Physical Review Applied

JF - Physical Review Applied

IS - 1

M1 - 014046

ER -

Piezoresistance in Defect-Engineered Silicon

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