Résumé
We have studied systematically a dry and free mask texturing process of crystalline silicon wafers using SF6/O2 plasmas in a reactive ion etching (RIE) system, with special attention on the effect of the RF plasma power and the SF6/O2 ratio on the texture of the silicon surface. In particular, we have found that by increasing the RF power, with an optimized SF6/O2 ratio and pressure it is possible to switch from a random texture, to a pyramid-like texture and finally to an inverted pyramid-like texture. This resulted in average reflectance values as low as 6%, which open an exciting opportunity for crystalline silicon solar cells applications.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 733-737 |
| Nombre de pages | 5 |
| journal | Solar Energy Materials and Solar Cells |
| Volume | 94 |
| Numéro de publication | 5 |
| Les DOIs | |
| état | Publié - 1 mai 2010 |
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