Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process

E. Pihan; A. Slaoui; A. Focsa; P. Roca i Cabarrocas

Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process

E. Pihan
, A. Slaoui
, A. Focsa
, P. Roca i Cabarrocas

CNRS

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Growth of polycrystalline silicon layers on ceramic substrates using the aluminium induced crystallisation (AIC) process of amorphous silicon is presented. Alumina and mullite ceramics were used as substrates as well as thermally-oxidized silicon for comparison. We have found a faster layer exchange process and therefore smaller grains in the final continuous poly-Si seed film on mullite and alumina. Raman spectroscopy confirmed the high crystalline quality of this AIC layer. Silicon epitaxy on the AIC seed layers by high temperature CVD is also reported, thanks to the ceramic substrate.

langue originale	Anglais
titre	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
rédacteurs en chef	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	1182-1185
Nombre de pages	4
état	Publié - 1 déc. 2003
Evénement	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japon Durée: 11 mai 2003 → 18 mai 2003

Série de publications

Nom	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	B

Une conférence

Une conférence	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Pays/Territoire	Japon
La ville	Osaka
période	11/05/03 → 18/05/03

Contient cette citation

Pihan, E., Slaoui, A., Focsa, A., & Roca i Cabarrocas, P. (2003). Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. Dans K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (p. 1182-1185). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol B).

Pihan, E. ; Slaoui, A. ; Focsa, A. et al. / Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Editeur / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. p. 1182-1185 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{85c81845802d4345864a2f5f28d0f6e5,

title = "Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process",

abstract = "Growth of polycrystalline silicon layers on ceramic substrates using the aluminium induced crystallisation (AIC) process of amorphous silicon is presented. Alumina and mullite ceramics were used as substrates as well as thermally-oxidized silicon for comparison. We have found a faster layer exchange process and therefore smaller grains in the final continuous poly-Si seed film on mullite and alumina. Raman spectroscopy confirmed the high crystalline quality of this AIC layer. Silicon epitaxy on the AIC seed layers by high temperature CVD is also reported, thanks to the ceramic substrate.",

author = "E. Pihan and A. Slaoui and A. Focsa and \{Roca i Cabarrocas\}, P.",

year = "2003",

month = dec,

day = "1",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "1182--1185",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Pihan, E, Slaoui, A, Focsa, A & Roca i Cabarrocas, P 2003, Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. Dans K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, VOL. B, p. 1182-1185, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japon, 11/05/03.

Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. / Pihan, E.; Slaoui, A.; Focsa, A. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 1182-1185 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol B).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process

AU - Pihan, E.

AU - Slaoui, A.

AU - Focsa, A.

AU - Roca i Cabarrocas, P.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Growth of polycrystalline silicon layers on ceramic substrates using the aluminium induced crystallisation (AIC) process of amorphous silicon is presented. Alumina and mullite ceramics were used as substrates as well as thermally-oxidized silicon for comparison. We have found a faster layer exchange process and therefore smaller grains in the final continuous poly-Si seed film on mullite and alumina. Raman spectroscopy confirmed the high crystalline quality of this AIC layer. Silicon epitaxy on the AIC seed layers by high temperature CVD is also reported, thanks to the ceramic substrate.

AB - Growth of polycrystalline silicon layers on ceramic substrates using the aluminium induced crystallisation (AIC) process of amorphous silicon is presented. Alumina and mullite ceramics were used as substrates as well as thermally-oxidized silicon for comparison. We have found a faster layer exchange process and therefore smaller grains in the final continuous poly-Si seed film on mullite and alumina. Raman spectroscopy confirmed the high crystalline quality of this AIC layer. Silicon epitaxy on the AIC seed layers by high temperature CVD is also reported, thanks to the ceramic substrate.

M3 - Conference contribution

AN - SCOPUS:6344221800

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 1182

EP - 1185

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Pihan E, Slaoui A, Focsa A, Roca i Cabarrocas P. Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process. Dans Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, rédacteurs en chef, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 1182-1185. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process

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Contient cette citation