Résumé
We summarize our current understanding of the optimization of PIN solar cells produced by plasma enhanced chemical vapour deposition from silane-hydrogen mixtures. To increase the deposition rate, the discharge is operated under plasma conditions close to powder formation, where silicon nanocrystals contribute to the deposition of so-called polymorphous silicon thin films. We show that the increase in deposition rate can be achieved via an accurate control of the plasma parameters. However, this also results in a highly defective interface in the solar cells due to the bombardment of the P-layer by positively charged nanocrystals during the deposition of the I-layer. We show that decreasing the ion energy by increasing the total pressure or by using silane-helium mixtures allows us to increase both the deposition rate and the solar cells efficiency, as required for cost effective thin film photovoltaics.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | B235-B243 |
| journal | Plasma Physics and Controlled Fusion |
| Volume | 46 |
| Numéro de publication | 12 B |
| Les DOIs | |
| état | Publié - 1 déc. 2004 |
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