Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

C. Corbel

doi:10.1016/0168-583X(92)95189-X

Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

C. Corbel

Institut Pierre Simon Laplace, CNRS and CEA

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

4 Citations (Scopus)

Résumé

We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

langue originale	Anglais
Pages (de - à)	166-172
Nombre de pages	7
journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	63
Numéro de publication	1-2
Les DOIs	https://doi.org/10.1016/0168-583X(92)95189-X
état	Publié - 1 janv. 1992
Modification externe	Oui

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10.1016/0168-583X(92)95189-X

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title = "Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs",

abstract = "We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.",

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T1 - Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

AU - Corbel, C.

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AB - We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.

U2 - 10.1016/0168-583X(92)95189-X

DO - 10.1016/0168-583X(92)95189-X

M3 - Article

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SN - 0168-583X

VL - 63

SP - 166

EP - 172

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

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