Positron annihilation at ionized acceptors and vacancies in indium phosphide after electron irradiation

M. Tornqvist; J. Nissila; F. Kiessling; C. Corbel; K. Saarinen; A. P. Seitsonen; P. Hautojarvi

Positron annihilation at ionized acceptors and vacancies in indium phosphide after electron irradiation

M. Tornqvist
, J. Nissila
, F. Kiessling
, C. Corbel
, K. Saarinen
, A. P. Seitsonen
, P. Hautojarvi

Institut National des Sciences et Techniques Nucléaires

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

14 Citations (Scopus)

Résumé

We report positron annihilation results on electron irradiated (2.0 MeV) InP. In all samples the average positron lifetime at 300 K increases after irradiation. Three defect lifetimes of 263 ps, 283 ps and 297 ps were found. In electron irradiated n-type InP(S:3.9 10¹⁸ cm^-3), the 283 ps vacancy recovers between 150 K-200 K, and after annealing at 300 K the 263 ps vacancy remains. In irradiated SI-InP(Fe) a defect lifetime of 297 ps was found after annealing at 300 K. The defect lifetimes were interpreted as Vp (263 ps), V_In (297 ps) and a mixing of the two (283 ps).

langue originale	Anglais
Pages (de - à)	347-352
Nombre de pages	6
journal	Materials Science Forum
Volume	143-4
Numéro de publication	pt 1
état	Publié - 1 déc. 1994
Modification externe	Oui
Evénement	Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Durée: 18 juil. 1993 → 23 juil. 1993

Contient cette citation

@article{12472cc0975c498480474cbd4534a417,

title = "Positron annihilation at ionized acceptors and vacancies in indium phosphide after electron irradiation",

abstract = "We report positron annihilation results on electron irradiated (2.0 MeV) InP. In all samples the average positron lifetime at 300 K increases after irradiation. Three defect lifetimes of 263 ps, 283 ps and 297 ps were found. In electron irradiated n-type InP(S:3.9 1018 cm-3), the 283 ps vacancy recovers between 150 K-200 K, and after annealing at 300 K the 263 ps vacancy remains. In irradiated SI-InP(Fe) a defect lifetime of 297 ps was found after annealing at 300 K. The defect lifetimes were interpreted as Vp (263 ps), VIn (297 ps) and a mixing of the two (283 ps).",

author = "M. Tornqvist and J. Nissila and F. Kiessling and C. Corbel and K. Saarinen and Seitsonen, \{A. P.\} and P. Hautojarvi",

year = "1994",

month = dec,

day = "1",

language = "English",

volume = "143-4",

pages = "347--352",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "pt 1",

note = "Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) ; Conference date: 18-07-1993 Through 23-07-1993",

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TY - JOUR

T1 - Positron annihilation at ionized acceptors and vacancies in indium phosphide after electron irradiation

AU - Tornqvist, M.

AU - Nissila, J.

AU - Kiessling, F.

AU - Corbel, C.

AU - Saarinen, K.

AU - Seitsonen, A. P.

AU - Hautojarvi, P.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We report positron annihilation results on electron irradiated (2.0 MeV) InP. In all samples the average positron lifetime at 300 K increases after irradiation. Three defect lifetimes of 263 ps, 283 ps and 297 ps were found. In electron irradiated n-type InP(S:3.9 1018 cm-3), the 283 ps vacancy recovers between 150 K-200 K, and after annealing at 300 K the 263 ps vacancy remains. In irradiated SI-InP(Fe) a defect lifetime of 297 ps was found after annealing at 300 K. The defect lifetimes were interpreted as Vp (263 ps), VIn (297 ps) and a mixing of the two (283 ps).

AB - We report positron annihilation results on electron irradiated (2.0 MeV) InP. In all samples the average positron lifetime at 300 K increases after irradiation. Three defect lifetimes of 263 ps, 283 ps and 297 ps were found. In electron irradiated n-type InP(S:3.9 1018 cm-3), the 283 ps vacancy recovers between 150 K-200 K, and after annealing at 300 K the 263 ps vacancy remains. In irradiated SI-InP(Fe) a defect lifetime of 297 ps was found after annealing at 300 K. The defect lifetimes were interpreted as Vp (263 ps), VIn (297 ps) and a mixing of the two (283 ps).

M3 - Conference article

AN - SCOPUS:0028607666

SN - 0255-5476

VL - 143-4

SP - 347

EP - 352

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 1

T2 - Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)

Y2 - 18 July 1993 through 23 July 1993

ER -

Positron annihilation at ionized acceptors and vacancies in indium phosphide after electron irradiation

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