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Positron states at point defects in GaAs measured by 2D-ACAR

  • R. Ambigapathy
  • , C. Corbel
  • , P. Hautojarvi
  • , A. A. Manuel
  • , K. Saarinen
  • University of Geneva

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

The electron-positron momentum distribution in the Ga vacancy (V Ga3-) and Ga antisite (GaAs2-) have been obtained by performing 2D-ACAR measurements on electron-irradiated semi-insulating GaAs. These results are compared to our previous results for the As vacancy. All the vacancy distributions are structureless, though their anisotropies indicate that there is a residual bulk-like component. The magnitude of this component varies from vacancy to vacancy and indicates how much the localized positron wave function extends in the crystal bulk around the vacancy. Our results show that this extension of the wave function in V Ga3- and VAs- is similar to and clearly greater than that in VAs0. The momentum distribution sampled by the positron in a Rydberg state about Ga As2-, though very similar to that of the bulk, can nevertheless be distinguished from the latter.

langue originaleAnglais
Numéro d'article001
Pages (de - à)L683-L688
journalJournal of Physics: Condensed Matter
Volume7
Numéro de publication49
Les DOIs
étatPublié - 1 déc. 1995
Modification externeOui

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