Positron trapping in vacancies in indium doped CdTe crystals

C. Gély-Sykes; C. Corbel; R. Triboulet

doi:10.1016/0038-1098(91)90602-R

Positron trapping in vacancies in indium doped CdTe crystals

C. Gély-Sykes
, C. Corbel
, R. Triboulet

Institut National des Sciences et Techniques Nucléaires
CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 ± 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (V_CdIn)^- complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.

langue originale	Anglais
Pages (de - à)	79-83
Nombre de pages	5
journal	Solid State Communications
Volume	80
Numéro de publication	1
Les DOIs	https://doi.org/10.1016/0038-1098(91)90602-R
état	Publié - 1 janv. 1991
Modification externe	Oui

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10.1016/0038-1098(91)90602-R

Contient cette citation

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title = "Positron trapping in vacancies in indium doped CdTe crystals",

abstract = "In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 ± 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (VCdIn)- complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.",

author = "C. G{\'e}ly-Sykes and C. Corbel and R. Triboulet",

year = "1991",

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N2 - In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 ± 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (VCdIn)- complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.

AB - In weakly n-type CdTe(In) crystals grown by the travelling heater method, positrons annihilate in vacancy-type defects with a lifetime of 320 ± 4 ps. The concentration of these native defects varies with the concentration of indium and electron in agreement with the model of self-compensation where the indium donors are compensated by indium-vacancy complexes. These defects are assumed to be (VCdIn)- complexes. The positron trapping in these complexes disappears at low temperature. This phenomenon is attributed to competing trapping of positrons by negative ions which are either residual impurities or intrinsic defects.

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DO - 10.1016/0038-1098(91)90602-R

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JO - Solid State Communications

JF - Solid State Communications

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Positron trapping in vacancies in indium doped CdTe crystals

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