TY - GEN
T1 - Power amplifier characterization
T2 - 2005 European Microwave Conference
AU - Bensmida, S.
AU - Bergeault, E.
AU - Abib, G. I.
AU - Huyart, B.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power added efficiency (PAE) or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High and low frequency bias-Tees are inserted at both ports of transistors in order to control source and load impedances at the base-band (envelope) frequency. Experimental results at 1.575 GHz, show an ACPR improvement of 20 dB for a commercial GaAs MESFET power transistor.
AB - An original measurement system for nonlinear RF power-transistor characterization is presented. This new setup enables measurement and optimization of output power, power added efficiency (PAE) or linearity using active fundamental tuning and six-port reflectometers as vector network analyzers. High and low frequency bias-Tees are inserted at both ports of transistors in order to control source and load impedances at the base-band (envelope) frequency. Experimental results at 1.575 GHz, show an ACPR improvement of 20 dB for a commercial GaAs MESFET power transistor.
UR - https://www.scopus.com/pages/publications/33847111747
U2 - 10.1109/EUMC.2005.1608931
DO - 10.1109/EUMC.2005.1608931
M3 - Conference contribution
AN - SCOPUS:33847111747
SN - 2960055128
SN - 9782960055122
T3 - 35th European Microwave Conference 2005 - Conference Proceedings
SP - 613
EP - 616
BT - 35th European Microwave Conference 2005 - Conference Proceedings
Y2 - 4 October 2005 through 6 October 2005
ER -