Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer

E. V.K. Rao; Y. Gottesman; D. Piot; L. Lucatero; E. Vergnol; M. Pommi

doi:10.1109/ICIPRM.2001.929086

Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer

E. V.K. Rao
, Y. Gottesman
, D. Piot
, L. Lucatero
, E. Vergnol
, M. Pommi

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

A high precision reflectometer for probing of localized reflections in photonic devices and circuits on InP was described. The reflectometer employed was the Michelson interferometer equipped with two low-coherence light probes. The optical and opto-electronic quality of the cavity were investigated through the transmitted probe light and the edge-electroluninescence from the device under carrier injection. This ivestigation led to the precise location of the unknown reflection. The recording of edge-electroluminescence spectrum from the test device provided the access to the opto-electronic quality of the guiding layer and the carrier combination properties of a center.

langue originale	Anglais
Pages (de - à)	178-179
Nombre de pages	2
journal	Conference Proceedings-International Conference on Indium Phosphide and Related Materials
Les DOIs	https://doi.org/10.1109/ICIPRM.2001.929086
état	Publié - 1 janv. 2001
Modification externe	Oui

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10.1109/ICIPRM.2001.929086

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title = "Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer",

abstract = "A high precision reflectometer for probing of localized reflections in photonic devices and circuits on InP was described. The reflectometer employed was the Michelson interferometer equipped with two low-coherence light probes. The optical and opto-electronic quality of the cavity were investigated through the transmitted probe light and the edge-electroluninescence from the device under carrier injection. This ivestigation led to the precise location of the unknown reflection. The recording of edge-electroluminescence spectrum from the test device provided the access to the opto-electronic quality of the guiding layer and the carrier combination properties of a center.",

author = "Rao, \{E. V.K.\} and Y. Gottesman and D. Piot and L. Lucatero and E. Vergnol and M. Pommi",

year = "2001",

month = jan,

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doi = "10.1109/ICIPRM.2001.929086",

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journal = "Conference Proceedings-International Conference on Indium Phosphide and Related Materials",

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Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer. / Rao, E. V.K.; Gottesman, Y.; Piot, D. et al.
Dans: Conference Proceedings-International Conference on Indium Phosphide and Related Materials, 01.01.2001, p. 178-179.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer

AU - Rao, E. V.K.

AU - Gottesman, Y.

AU - Piot, D.

AU - Lucatero, L.

AU - Vergnol, E.

AU - Pommi, M.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - A high precision reflectometer for probing of localized reflections in photonic devices and circuits on InP was described. The reflectometer employed was the Michelson interferometer equipped with two low-coherence light probes. The optical and opto-electronic quality of the cavity were investigated through the transmitted probe light and the edge-electroluninescence from the device under carrier injection. This ivestigation led to the precise location of the unknown reflection. The recording of edge-electroluminescence spectrum from the test device provided the access to the opto-electronic quality of the guiding layer and the carrier combination properties of a center.

AB - A high precision reflectometer for probing of localized reflections in photonic devices and circuits on InP was described. The reflectometer employed was the Michelson interferometer equipped with two low-coherence light probes. The optical and opto-electronic quality of the cavity were investigated through the transmitted probe light and the edge-electroluninescence from the device under carrier injection. This ivestigation led to the precise location of the unknown reflection. The recording of edge-electroluminescence spectrum from the test device provided the access to the opto-electronic quality of the guiding layer and the carrier combination properties of a center.

UR - https://www.scopus.com/pages/publications/0034854249

U2 - 10.1109/ICIPRM.2001.929086

DO - 10.1109/ICIPRM.2001.929086

M3 - Article

AN - SCOPUS:0034854249

SN - 1092-8669

SP - 178

EP - 179

JO - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings-International Conference on Indium Phosphide and Related Materials

ER -

Probing of localized reflections in photonic devices and circuits on InP using an upgraded high precision reflectometer

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