@inproceedings{667bc9d2a3fa44368ea78012ddcdb993,
title = "Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection",
abstract = "In this paper we focus on the implementation of a process flow of SB-MOSFETs into the process simulator of the Synopsys TCAD Sentaurus tool-chain. The improved structure containing topography is briefly discussed and further device simulations are applied with the latest physical models available for these type of devices. Afterwards, some key parameters are discussed and finally the results are compared with fabricated SB-MOSFETs in terms of accuracy and capability of process simulations.",
keywords = "2D Poisson equation, MOSFET, Schottky barrier, Synopsys, TCAD, device modeling, field emission, process simulation, thermionic emission, tunneling current",
author = "Mike Schwarz and Calvet, \{Laurie E.\} and Snyder, \{John P.\} and Tillmann Krauss and Udo Schwalke and Alexander Kloes",
note = "Publisher Copyright: {\textcopyright} 2018 Department of Microelectronics and Computer Science, Lodz University of Technology.; 25th International Conference {"}Mixed Design of Integrated Circuits and Systems{"}, MIXDES 2018 ; Conference date: 21-06-2018 Through 23-06-2018",
year = "2018",
month = aug,
day = "14",
doi = "10.23919/MIXDES.2018.8436636",
language = "English",
isbn = "9788363578138",
series = "Proceedings of 25th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "67--72",
editor = "Andrzej Napieralski",
booktitle = "Proceedings of 25th International Conference Mixed Design of Integrated Circuits and Systems, MIXDES 2018",
}