Progress on tight-binding calculations of silicon grain boundaries containing nickel impurities

M. Torrent; O. B.M. Hardouin Duparc

doi:10.4028/www.scientific.net/msf.207-209.349

Progress on tight-binding calculations of silicon grain boundaries containing nickel impurities

M. Torrent
, O. B.M. Hardouin Duparc

Laboratoire des Solides Irradiés

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

A set of tight-binding parameters for Ni-Si compounds is being described. First tests on mechanical properties and pure silicon grain boundaries are presented.

langue originale	Anglais
Pages (de - à)	349-352
Nombre de pages	4
journal	Materials Science Forum
Volume	207-209
Numéro de publication	PART 1
Les DOIs	https://doi.org/10.4028/www.scientific.net/msf.207-209.349
état	Publié - 1 janv. 1996

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@article{c4ac73870a0b488c8a20b87ea8bf5d37,

title = "Progress on tight-binding calculations of silicon grain boundaries containing nickel impurities",

abstract = "A set of tight-binding parameters for Ni-Si compounds is being described. First tests on mechanical properties and pure silicon grain boundaries are presented.",

keywords = "Electronic Structure, Grain Boundary, Nickel, Numerical Simulations, Silicon, Tight-Binding",

author = "M. Torrent and \{Hardouin Duparc\}, \{O. B.M.\}",

year = "1996",

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doi = "10.4028/www.scientific.net/msf.207-209.349",

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journal = "Materials Science Forum",

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N2 - A set of tight-binding parameters for Ni-Si compounds is being described. First tests on mechanical properties and pure silicon grain boundaries are presented.

AB - A set of tight-binding parameters for Ni-Si compounds is being described. First tests on mechanical properties and pure silicon grain boundaries are presented.

KW - Electronic Structure

KW - Grain Boundary

KW - Nickel

KW - Numerical Simulations

KW - Silicon

KW - Tight-Binding

U2 - 10.4028/www.scientific.net/msf.207-209.349

DO - 10.4028/www.scientific.net/msf.207-209.349

M3 - Article

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SN - 0255-5476

VL - 207-209

SP - 349

EP - 352

JO - Materials Science Forum

JF - Materials Science Forum

IS - PART 1

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Progress on tight-binding calculations of silicon grain boundaries containing nickel impurities

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