Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices

Mauro Menichelli; Saba Aziz; Aishah Bashiri; Marco Bizzarri; Clarissa Buti; Lucio Calcagnile; Daniela Calvo; Mirco Caprai; Domenico Caputo; Anna P. Caricato; Roberto Catalano; Massimo Cazzanelli; Roberto Cirio; Giuseppe A.P. Cirrone; Federico Cittadini; Tommaso Croci; Giacomo Cuttone; Giampiero de Cesare; Paolo De Remigis; Sylvain Dunand; Michele Fabi; Luca Frontini; Catia Grimani; Mariacristina Guarrera; Hamza Hasnaoui; Maria Ionica; Keida Kanxheri; Matthew Large; Francesca Lenta; Valentino Liberali; Nicola Lovecchio; Maurizio Martino; Giuseppe Maruccio; Lucio Maruccio; Giovanni Mazza; Anna G. Monteduro; Arianna Morozzi; Augusto Nascetti; Stefania Pallotta; Andrea Papi; Daniele Passeri; Maddalena Pedio; Marco Petasecca; Giada Petringa; Francesca Peverini; Pisana Placidi; Matteo Polo; Alberto Quaranta; Gianluca Quarta; Silvia Rizzato; Federico Sabbatini; Leonello Servoli; Alberto Stabile; Cinzia Talamonti; Jonathan E. Thomet; Monica S.Vasquez Mora; Mattia Villani; Richard J. Wheadon; Nicolas Wyrsch; Nicola Zema; Luca Tosti

doi:10.1109/TNS.2025.3619653

Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices

Mauro Menichelli
, Saba Aziz
, Aishah Bashiri
, Marco Bizzarri
, Clarissa Buti
, Lucio Calcagnile
, Daniela Calvo
, Mirco Caprai
, Domenico Caputo
, Anna P. Caricato
, Roberto Catalano
, Massimo Cazzanelli
, Roberto Cirio
, Giuseppe A.P. Cirrone
, Federico Cittadini
, Tommaso Croci
, Giacomo Cuttone
, Giampiero de Cesare
, Paolo De Remigis
, Sylvain Dunand

Michele Fabi, Luca Frontini, Catia Grimani, Mariacristina Guarrera, Hamza Hasnaoui, Maria Ionica, Keida Kanxheri, Matthew Large, Francesca Lenta, Valentino Liberali, Nicola Lovecchio, Maurizio Martino, Giuseppe Maruccio, Lucio Maruccio, Giovanni Mazza, Anna G. Monteduro, Arianna Morozzi, Augusto Nascetti, Stefania Pallotta, Andrea Papi, Daniele Passeri, Maddalena Pedio, Marco Petasecca, Giada Petringa, Francesca Peverini, Pisana Placidi, Matteo Polo, Alberto Quaranta, Gianluca Quarta, Silvia Rizzato, Federico Sabbatini, Leonello Servoli, Alberto Stabile, Cinzia Talamonti, Jonathan E. Thomet, Monica S.Vasquez Mora, Mattia Villani, Richard J. Wheadon, Nicolas Wyrsch, Nicola Zema, Luca Tosti

INFN Sezione di Perugia
Sezione di Lecce
University of Salento
Najran University
Department of Physics and Geology
University of Florence
INFN Sezione di Torino
Sezione di Roma
University of Rome
INFN Sezione di Catania
University of Padova
Photovoltaics and Thin-Film Electronics Laboratory (PV-Lab)
University of Urbino Carlo Bo
University of Milano
University of Wollongong
Politecnico di Torino
University of Rome
Department of Engineering
International School for Advanced Studies (SISSA/ISAS)
Istituto Nazionale di Fisica Nucleare, Sezione di Firenze
Sezione INFN di Milano
Consiglio Nazionale delle Ricerche

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Radiation damage tests in hydrogenated amorphoussilicon (a-Si:H) flexible flux and dose-measuring devices havebeen performed with a 3-MeV proton beam, to evaluate combineddisplacement and total ionizing dose damage. The tested deviceshad two different configurations and thicknesses. The first devicewas a 2-μm-thick n-i-p diode having a 5 × 5 mm area. Thesecond device was a 5-μm-thick charge-selective contact (CSC)detector having the same area. Both the devices were depositedon a flexible polyimide substrate and were irradiated up to thefluence of 10¹⁶ n_eq/cm². The response to different proton fluxeshas been measured before irradiation and after irradiation at10¹⁶ n_eq/cm² for CSCs and n-i-p devices. The effect of annealingfor partial performance recovery at 100 ◦C for 12 h was alsostudied, and a final characterization on annealed devices wasperformed. This test is the first combined displacement and totalionizing dose test on flexible a-Si:H devices.

langue originale	Anglais
Pages (de - à)	3824-3829
Nombre de pages	6
journal	IEEE Transactions on Nuclear Science
Volume	72
Numéro de publication	12
Les DOIs	https://doi.org/10.1109/TNS.2025.3619653
état	Publié - 1 janv. 2025
Modification externe	Oui

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10.1109/TNS.2025.3619653

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Menichelli, M., Aziz, S., Bashiri, A., Bizzarri, M., Buti, C., Calcagnile, L., Calvo, D., Caprai, M., Caputo, D., Caricato, A. P., Catalano, R., Cazzanelli, M., Cirio, R., Cirrone, G. A. P., Cittadini, F., Croci, T., Cuttone, G., de Cesare, G., De Remigis, P., ... Tosti, L. (2025). Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices. IEEE Transactions on Nuclear Science, 72(12), 3824-3829. https://doi.org/10.1109/TNS.2025.3619653

@article{8242dc2794174ef6b6a2d28ddfe8ca2c,

title = "Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices",

abstract = "Radiation damage tests in hydrogenated amorphoussilicon (a-Si:H) flexible flux and dose-measuring devices havebeen performed with a 3-MeV proton beam, to evaluate combineddisplacement and total ionizing dose damage. The tested deviceshad two different configurations and thicknesses. The first devicewas a 2-μm-thick n-i-p diode having a 5 × 5 mm area. Thesecond device was a 5-μm-thick charge-selective contact (CSC)detector having the same area. Both the devices were depositedon a flexible polyimide substrate and were irradiated up to thefluence of 1016 neq/cm2. The response to different proton fluxeshas been measured before irradiation and after irradiation at1016 neq/cm2 for CSCs and n-i-p devices. The effect of annealingfor partial performance recovery at 100 ◦C for 12 h was alsostudied, and a final characterization on annealed devices wasperformed. This test is the first combined displacement and totalionizing dose test on flexible a-Si:H devices.",

keywords = "Hydrogenated amorphous silicon, X-ray detectors, particle detectors, radiation damage, solid-state detectors",

author = "Mauro Menichelli and Saba Aziz and Aishah Bashiri and Marco Bizzarri and Clarissa Buti and Lucio Calcagnile and Daniela Calvo and Mirco Caprai and Domenico Caputo and Caricato, \{Anna P.\} and Roberto Catalano and Massimo Cazzanelli and Roberto Cirio and Cirrone, \{Giuseppe A.P.\} and Federico Cittadini and Tommaso Croci and Giacomo Cuttone and \{de Cesare\}, Giampiero and \{De Remigis\}, Paolo and Sylvain Dunand and Michele Fabi and Luca Frontini and Catia Grimani and Mariacristina Guarrera and Hamza Hasnaoui and Maria Ionica and Keida Kanxheri and Matthew Large and Francesca Lenta and Valentino Liberali and Nicola Lovecchio and Maurizio Martino and Giuseppe Maruccio and Lucio Maruccio and Giovanni Mazza and Monteduro, \{Anna G.\} and Arianna Morozzi and Augusto Nascetti and Stefania Pallotta and Andrea Papi and Daniele Passeri and Maddalena Pedio and Marco Petasecca and Giada Petringa and Francesca Peverini and Pisana Placidi and Matteo Polo and Alberto Quaranta and Gianluca Quarta and Silvia Rizzato and Federico Sabbatini and Leonello Servoli and Alberto Stabile and Cinzia Talamonti and Thomet, \{Jonathan E.\} and Mora, \{Monica S.Vasquez\} and Mattia Villani and Wheadon, \{Richard J.\} and Nicolas Wyrsch and Nicola Zema and Luca Tosti",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2025",

month = jan,

day = "1",

doi = "10.1109/TNS.2025.3619653",

language = "English",

volume = "72",

pages = "3824--3829",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

number = "12",

}

Menichelli, M, Aziz, S, Bashiri, A, Bizzarri, M, Buti, C, Calcagnile, L, Calvo, D, Caprai, M, Caputo, D, Caricato, AP, Catalano, R, Cazzanelli, M, Cirio, R, Cirrone, GAP, Cittadini, F, Croci, T, Cuttone, G, de Cesare, G, De Remigis, P, Dunand, S, Fabi, M, Frontini, L, Grimani, C, Guarrera, M, Hasnaoui, H, Ionica, M, Kanxheri, K, Large, M, Lenta, F, Liberali, V, Lovecchio, N, Martino, M, Maruccio, G, Maruccio, L, Mazza, G, Monteduro, AG, Morozzi, A, Nascetti, A, Pallotta, S, Papi, A, Passeri, D, Pedio, M, Petasecca, M, Petringa, G, Peverini, F, Placidi, P, Polo, M, Quaranta, A, Quarta, G, Rizzato, S, Sabbatini, F, Servoli, L, Stabile, A, Talamonti, C, Thomet, JE, Mora, MSV, Villani, M, Wheadon, RJ, Wyrsch, N, Zema, N & Tosti, L 2025, 'Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices', IEEE Transactions on Nuclear Science, VOL. 72, Numéro 12, p. 3824-3829. https://doi.org/10.1109/TNS.2025.3619653

TY - JOUR

T1 - Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices

AU - Menichelli, Mauro

AU - Aziz, Saba

AU - Bashiri, Aishah

AU - Bizzarri, Marco

AU - Buti, Clarissa

AU - Calcagnile, Lucio

AU - Calvo, Daniela

AU - Caprai, Mirco

AU - Caputo, Domenico

AU - Caricato, Anna P.

AU - Catalano, Roberto

AU - Cazzanelli, Massimo

AU - Cirio, Roberto

AU - Cirrone, Giuseppe A.P.

AU - Cittadini, Federico

AU - Croci, Tommaso

AU - Cuttone, Giacomo

AU - de Cesare, Giampiero

AU - De Remigis, Paolo

AU - Dunand, Sylvain

AU - Fabi, Michele

AU - Frontini, Luca

AU - Grimani, Catia

AU - Guarrera, Mariacristina

AU - Hasnaoui, Hamza

AU - Ionica, Maria

AU - Kanxheri, Keida

AU - Large, Matthew

AU - Lenta, Francesca

AU - Liberali, Valentino

AU - Lovecchio, Nicola

AU - Martino, Maurizio

AU - Maruccio, Giuseppe

AU - Maruccio, Lucio

AU - Mazza, Giovanni

AU - Monteduro, Anna G.

AU - Morozzi, Arianna

AU - Nascetti, Augusto

AU - Pallotta, Stefania

AU - Papi, Andrea

AU - Passeri, Daniele

AU - Pedio, Maddalena

AU - Petasecca, Marco

AU - Petringa, Giada

AU - Peverini, Francesca

AU - Placidi, Pisana

AU - Polo, Matteo

AU - Quaranta, Alberto

AU - Quarta, Gianluca

AU - Rizzato, Silvia

AU - Sabbatini, Federico

AU - Servoli, Leonello

AU - Stabile, Alberto

AU - Talamonti, Cinzia

AU - Thomet, Jonathan E.

AU - Mora, Monica S.Vasquez

AU - Villani, Mattia

AU - Wheadon, Richard J.

AU - Wyrsch, Nicolas

AU - Zema, Nicola

AU - Tosti, Luca

PY - 2025/1/1

Y1 - 2025/1/1

N2 - Radiation damage tests in hydrogenated amorphoussilicon (a-Si:H) flexible flux and dose-measuring devices havebeen performed with a 3-MeV proton beam, to evaluate combineddisplacement and total ionizing dose damage. The tested deviceshad two different configurations and thicknesses. The first devicewas a 2-μm-thick n-i-p diode having a 5 × 5 mm area. Thesecond device was a 5-μm-thick charge-selective contact (CSC)detector having the same area. Both the devices were depositedon a flexible polyimide substrate and were irradiated up to thefluence of 1016 neq/cm2. The response to different proton fluxeshas been measured before irradiation and after irradiation at1016 neq/cm2 for CSCs and n-i-p devices. The effect of annealingfor partial performance recovery at 100 ◦C for 12 h was alsostudied, and a final characterization on annealed devices wasperformed. This test is the first combined displacement and totalionizing dose test on flexible a-Si:H devices.

AB - Radiation damage tests in hydrogenated amorphoussilicon (a-Si:H) flexible flux and dose-measuring devices havebeen performed with a 3-MeV proton beam, to evaluate combineddisplacement and total ionizing dose damage. The tested deviceshad two different configurations and thicknesses. The first devicewas a 2-μm-thick n-i-p diode having a 5 × 5 mm area. Thesecond device was a 5-μm-thick charge-selective contact (CSC)detector having the same area. Both the devices were depositedon a flexible polyimide substrate and were irradiated up to thefluence of 1016 neq/cm2. The response to different proton fluxeshas been measured before irradiation and after irradiation at1016 neq/cm2 for CSCs and n-i-p devices. The effect of annealingfor partial performance recovery at 100 ◦C for 12 h was alsostudied, and a final characterization on annealed devices wasperformed. This test is the first combined displacement and totalionizing dose test on flexible a-Si:H devices.

KW - Hydrogenated amorphous silicon

KW - X-ray detectors

KW - particle detectors

KW - radiation damage

KW - solid-state detectors

UR - https://www.scopus.com/pages/publications/105018713585

U2 - 10.1109/TNS.2025.3619653

DO - 10.1109/TNS.2025.3619653

M3 - Article

AN - SCOPUS:105018713585

SN - 0018-9499

VL - 72

SP - 3824

EP - 3829

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 12

ER -

Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices

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