Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation by total internal reflection in isotropic semiconductors

R. Haïdar; Ph Kupecek; Ph Lemasson; R. Triboulet; E. Rosencher

Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation by total internal reflection in isotropic semiconductors

R. Haïdar
, Ph Kupecek
, Ph Lemasson
, R. Triboulet
, E. Rosencher

ONERA Office National d'Etudes et Recherches Aerospatiales
Sorbonne Université
CNRS

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

Résumé

Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation (DFG), by total internal reflection in isotropic semiconductors, was demonstrated. Pump beams for DFG were the signal and idler outputs of a YAG:Nd³⁺ pumped LiNbO₃-optical parametric oscillator. Outputs were processed to obtain 500 μm diameter superimposed parallel beams. Results indicated that maximum angle of total internal reflection was obtained through rotation of the wafers relatively to the pump beam propagation.

langue originale	Anglais
Pages	149
Nombre de pages	1
état	Publié - 1 janv. 2002
Modification externe	Oui
Evénement	Conference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, États-Unis Durée: 19 mai 2002 → 24 mai 2002

Une conférence

Une conférence	Conference on Lasers and Electro-Optics (CLEO 2002)
Pays/Territoire	États-Unis
La ville	Long Beach, CA
période	19/05/02 → 24/05/02

Contient cette citation

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title = "Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation by total internal reflection in isotropic semiconductors",

abstract = "Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation (DFG), by total internal reflection in isotropic semiconductors, was demonstrated. Pump beams for DFG were the signal and idler outputs of a YAG:Nd3+ pumped LiNbO3-optical parametric oscillator. Outputs were processed to obtain 500 μm diameter superimposed parallel beams. Results indicated that maximum angle of total internal reflection was obtained through rotation of the wafers relatively to the pump beam propagation.",

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Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation by total internal reflection in isotropic semiconductors. / Haïdar, R.; Kupecek, Ph; Lemasson, Ph et al.
2002. 149 Papier présenté � Conference on Lasers and Electro-Optics (CLEO 2002), Long Beach, CA, États-Unis.

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

TY - CONF

T1 - Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation by total internal reflection in isotropic semiconductors

AU - Haïdar, R.

AU - Kupecek, Ph

AU - Lemasson, Ph

AU - Triboulet, R.

AU - Rosencher, E.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation (DFG), by total internal reflection in isotropic semiconductors, was demonstrated. Pump beams for DFG were the signal and idler outputs of a YAG:Nd3+ pumped LiNbO3-optical parametric oscillator. Outputs were processed to obtain 500 μm diameter superimposed parallel beams. Results indicated that maximum angle of total internal reflection was obtained through rotation of the wafers relatively to the pump beam propagation.

AB - Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation (DFG), by total internal reflection in isotropic semiconductors, was demonstrated. Pump beams for DFG were the signal and idler outputs of a YAG:Nd3+ pumped LiNbO3-optical parametric oscillator. Outputs were processed to obtain 500 μm diameter superimposed parallel beams. Results indicated that maximum angle of total internal reflection was obtained through rotation of the wafers relatively to the pump beam propagation.

M3 - Paper

AN - SCOPUS:0036457270

SP - 149

T2 - Conference on Lasers and Electro-Optics (CLEO 2002)

Y2 - 19 May 2002 through 24 May 2002

ER -

Quasi-phase matched tunable mid-infrared (8-12 μm) difference frequency generation by total internal reflection in isotropic semiconductors

Résumé

Une conférence

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