Radiative transfer in semiconductor microcavities

J. Wainstain; D. Gendt; C. Delalande; M. Voos; V. Thierry-Mieg; J. Bloch; R. Planel

doi:10.1016/S1386-9477(98)00188-X

Radiative transfer in semiconductor microcavities

J. Wainstain
, D. Gendt
, C. Delalande
, M. Voos
, V. Thierry-Mieg
, J. Bloch
, R. Planel

PSL research University & IPSL
Lab. Microstructures Microlectron.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Two sets of quantum wells of slightly different thicknesses are grown at the antinode positions of a planar semiconductor microcavity. The excitation transfer from one set to the other, distant by 1400 Å, is studied by means of photoluminescence and photoluminescence excitation spectroscopies. The role of delocalized microcavity polariton states is emphasized.

langue originale	Anglais
Pages (de - à)	925-928
Nombre de pages	4
journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	2
Numéro de publication	1-4
Les DOIs	https://doi.org/10.1016/S1386-9477(98)00188-X
état	Publié - 15 juil. 1998
Modification externe	Oui

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10.1016/S1386-9477(98)00188-X

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title = "Radiative transfer in semiconductor microcavities",

abstract = "Two sets of quantum wells of slightly different thicknesses are grown at the antinode positions of a planar semiconductor microcavity. The excitation transfer from one set to the other, distant by 1400 {\AA}, is studied by means of photoluminescence and photoluminescence excitation spectroscopies. The role of delocalized microcavity polariton states is emphasized.",

keywords = "Optical and electronic properties, Polaritons, Semiconductor quantum wells",

author = "J. Wainstain and D. Gendt and C. Delalande and M. Voos and V. Thierry-Mieg and J. Bloch and R. Planel",

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T1 - Radiative transfer in semiconductor microcavities

AU - Wainstain, J.

AU - Gendt, D.

AU - Delalande, C.

AU - Voos, M.

AU - Thierry-Mieg, V.

AU - Bloch, J.

AU - Planel, R.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - Two sets of quantum wells of slightly different thicknesses are grown at the antinode positions of a planar semiconductor microcavity. The excitation transfer from one set to the other, distant by 1400 Å, is studied by means of photoluminescence and photoluminescence excitation spectroscopies. The role of delocalized microcavity polariton states is emphasized.

AB - Two sets of quantum wells of slightly different thicknesses are grown at the antinode positions of a planar semiconductor microcavity. The excitation transfer from one set to the other, distant by 1400 Å, is studied by means of photoluminescence and photoluminescence excitation spectroscopies. The role of delocalized microcavity polariton states is emphasized.

KW - Optical and electronic properties

KW - Polaritons

KW - Semiconductor quantum wells

UR - https://www.scopus.com/pages/publications/0000333740

U2 - 10.1016/S1386-9477(98)00188-X

DO - 10.1016/S1386-9477(98)00188-X

M3 - Article

AN - SCOPUS:0000333740

SN - 1386-9477

VL - 2

SP - 925

EP - 928

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

ER -

Radiative transfer in semiconductor microcavities

Résumé

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