Résumé
The formation of GaSb nanopillars by low energy ion sputtering is studied in real-time by spectroscopic Mueller matrix ellipsometry, from the initial formation in the smooth substrate until nanopillars with a height of 200 . 300 nm are formed. As the nanopillar height increased above 100 nm, coupling between orthogonal polarization modes was observed. Ex situ angle resolved Mueller polarimetry measurements revealed a 180° azimuth rotation symmetry in the off-diagonal Mueller elements, which can be explained by a biaxial material with different dielectric functions σx and σy in a plane parallel to the substrate. This polarization coupling can be caused by a tendency for local direction dependent alignment of the pillars, and such a tendency is confirmed by scanning electron microscopy. Such observations have not been made for GaSb nanopillars shorter than 100 nm, which have optical properties that can be modeled as a uniaxial effective medium.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 12551-12561 |
| Nombre de pages | 11 |
| journal | Optics Express |
| Volume | 19 |
| Numéro de publication | 13 |
| Les DOIs | |
| état | Publié - 20 juin 2011 |
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