Realization of a double-barrier resonant tunneling diode for cavity polaritons

H. S. Nguyen; D. Vishnevsky; C. Sturm; D. Tanese; D. Solnyshkov; E. Galopin; A. Lemaître; I. Sagnes; A. Amo; G. Malpuech; J. Bloch

doi:10.1103/PhysRevLett.110.236601

Realization of a double-barrier resonant tunneling diode for cavity polaritons

H. S. Nguyen
, D. Vishnevsky
, C. Sturm
, D. Tanese
, D. Solnyshkov
, E. Galopin
, A. Lemaître
, I. Sagnes
, A. Amo
, G. Malpuech
, J. Bloch

École Polytechnique

CNRS
Institut Pascal

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

135 Citations (Scopus)

Résumé

We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.

langue originale	Anglais
Numéro d'article	236601
journal	Physical Review Letters
Volume	110
Numéro de publication	23
Les DOIs	https://doi.org/10.1103/PhysRevLett.110.236601
état	Publié - 3 juin 2013

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10.1103/PhysRevLett.110.236601

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@article{7c07f48120a74f698f948cc1c366006e,

title = "Realization of a double-barrier resonant tunneling diode for cavity polaritons",

abstract = "We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.",

author = "Nguyen, \{H. S.\} and D. Vishnevsky and C. Sturm and D. Tanese and D. Solnyshkov and E. Galopin and A. Lema{\^i}tre and I. Sagnes and A. Amo and G. Malpuech and J. Bloch",

year = "2013",

month = jun,

day = "3",

doi = "10.1103/PhysRevLett.110.236601",

language = "English",

volume = "110",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "23",

}

TY - JOUR

T1 - Realization of a double-barrier resonant tunneling diode for cavity polaritons

AU - Nguyen, H. S.

AU - Vishnevsky, D.

AU - Sturm, C.

AU - Tanese, D.

AU - Solnyshkov, D.

AU - Galopin, E.

AU - Lemaître, A.

AU - Sagnes, I.

AU - Amo, A.

AU - Malpuech, G.

AU - Bloch, J.

PY - 2013/6/3

Y1 - 2013/6/3

N2 - We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.

AB - We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.

UR - https://www.scopus.com/pages/publications/84878725993

U2 - 10.1103/PhysRevLett.110.236601

DO - 10.1103/PhysRevLett.110.236601

M3 - Article

AN - SCOPUS:84878725993

SN - 0031-9007

VL - 110

JO - Physical Review Letters

JF - Physical Review Letters

IS - 23

M1 - 236601

ER -

Realization of a double-barrier resonant tunneling diode for cavity polaritons

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