@inproceedings{172e2c5dc4574281b3daf3e8bd102170,
title = "Recent advances in GaSb-based structures for mid-infrared emitting lasers: Spectroscopic study",
abstract = "There are reviewed the optical properties of two kind of active regions of mid infrared laser devices both grown on GaSb substrates: GaInAsSb/AlGaInAsSb type I QWs for laser diodes and InAs/GaInAsSb type II QWs for interband cascade lasers. There are presented their crucial optical properties and the related current challenges with respect to the device performances. This covers such issues as spectral tenability of the emission via the structure parameters, the band gap discontinuities, carrier loss mechanisms and oscillator strengths. For that, spectroscopic techniques have been used (photoluminescence and its temperature dependence, and photoreflectance) and combined with the energy level calculations based on effective mass approximation and kp theory. Eventually, the potential for further material optimization and prospects for the improved device performances are also discussed.",
keywords = "GaSb-based structures, gas sensing, interband cascade laser, mid infrared, quantum well, semiconductor laser, type II quantum well",
author = "Grzegorz Sȩk and Marcin Motyka and Filip Janiak and Krzysztof Ryczko and Jan Misiewicz and Adam Bauer and Matthias Dallner and Robert Weih and Sven H{\"o}fling and Alfred Forchel and Sofiane Belahsene and Guilhem Boissier and Yves Rouillard",
year = "2013",
month = apr,
day = "9",
doi = "10.1117/12.2016699",
language = "English",
isbn = "9780819494009",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Quantum Sensing and Nanophotonic Devices X",
note = "Quantum Sensing and Nanophotonic Devices X ; Conference date: 03-02-2013 Through 07-02-2013",
}