Recrystallization kinetics pattern in III-V implanted semiconductors

Solid phase epitaxial regrowth has been studied for a variety of ion-implanted compound semiconductors. The time-resolved reflectivity technique is used to determine growth kinetics. It is shown that the growth rate follows a thermal activation law whose activation energy and pre-exponential factor are measured. In all III-V compounds and alloys, a common regrowth kinetics behavior is found, with the activation energy proportional to a characteristic vibrational relaxation energy which also intervenes in the description of point defect migration. Differences with the case of column IV semiconductors are discussed.