Reduction of V                         oc                          induced by the electron-phonon scattering in GaAs and CH                         3                         NH                         3                         PbI                         3

Benoit Galvani; Amaury Delamarre; Daniel Suchet; Marc Bescond; Fabienne Michelini; Michel Lannoo; Masakazu Sugyiama; Jacky Even; Jean François Guillemoles; Nicolas Cavassilas

doi:10.1109/PVSC.2018.8547650

Reduction of V _oc induced by the electron-phonon scattering in GaAs and CH ₃ NH ₃ PbI ₃

Benoit Galvani
, Amaury Delamarre
, Daniel Suchet
, Marc Bescond
, Fabienne Michelini
, Michel Lannoo
, Masakazu Sugyiama
, Jacky Even
, Jean François Guillemoles
, Nicolas Cavassilas

Aix Marseille Université
Tokyo University
University of Tokyo
Institut FOTON-UMR6082

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

This work highlights the intrinsic modification of the electronic density-of-states due to electron-phonon scattering. Using a quantum model we show that, by broadening the density-of-states in the bandgap, the scattering changes the absorption/emission ratio and then some photovoltaic parameters like V _oc . For the high mobility GaAs material we obtain a moderate V _oc reduction of 4mV. In the highly polar CH ₃ NH ₃ PbI ₃ perovskite material, even through the mobility is low, the broadening in the density-of-states is limited by the small phonon energy and then the V _oc reduction remains inferior to 41mV.

langue originale	Anglais
titre	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	1796-1799
Nombre de pages	4
ISBN (Electronique)	9781538685297
Les DOIs	https://doi.org/10.1109/PVSC.2018.8547650
état	Publié - 26 nov. 2018
Evénement	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, États-Unis Durée: 10 juin 2018 → 15 juin 2018

Série de publications

Nom	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Volume	2018-January

Une conférence

Une conférence	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Pays/Territoire	États-Unis
La ville	Waikoloa Village
période	10/06/18 → 15/06/18

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/PVSC.2018.8547650

Contient cette citation

Galvani, B., Delamarre, A., Suchet, D., Bescond, M., Michelini, F., Lannoo, M., Sugyiama, M., Even, J., Guillemoles, J. F., & Cavassilas, N. (2018). Reduction of V _oc induced by the electron-phonon scattering in GaAs and CH ₃ NH ₃ PbI ₃ Dans 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (p. 1796-1799). Article 8547650 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC; Vol 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547650

Galvani, Benoit ; Delamarre, Amaury ; Suchet, Daniel et al. / Reduction of V _oc induced by the electron-phonon scattering in GaAs and CH ₃ NH ₃ PbI ₃ 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1796-1799 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{298902e4bfd942898e4c2cb790c51f1e,

title = " Reduction of V oc induced by the electron-phonon scattering in GaAs and CH 3 NH 3 PbI 3 ",

abstract = " This work highlights the intrinsic modification of the electronic density-of-states due to electron-phonon scattering. Using a quantum model we show that, by broadening the density-of-states in the bandgap, the scattering changes the absorption/emission ratio and then some photovoltaic parameters like V oc . For the high mobility GaAs material we obtain a moderate V oc reduction of 4mV. In the highly polar CH 3 NH 3 PbI 3 perovskite material, even through the mobility is low, the broadening in the density-of-states is limited by the small phonon energy and then the V oc reduction remains inferior to 41mV.",

author = "Benoit Galvani and Amaury Delamarre and Daniel Suchet and Marc Bescond and Fabienne Michelini and Michel Lannoo and Masakazu Sugyiama and Jacky Even and Guillemoles, \{Jean Fran{\c c}ois\} and Nicolas Cavassilas",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8547650",

language = "English",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

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Galvani, B, Delamarre, A, Suchet, D, Bescond, M, Michelini, F, Lannoo, M, Sugyiama, M, Even, J, Guillemoles, JF & Cavassilas, N 2018, Reduction of V _oc induced by the electron-phonon scattering in GaAs and CH ₃ NH ₃ PbI ₃ Dans 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547650, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, VOL. 2018-January, Institute of Electrical and Electronics Engineers Inc., p. 1796-1799, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, États-Unis, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547650

Reduction of V _oc induced by the electron-phonon scattering in GaAs and CH ₃ NH ₃ PbI ₃ . / Galvani, Benoit; Delamarre, Amaury; Suchet, Daniel et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1796-1799 8547650 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC; Vol 2018-January).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Reduction of V oc induced by the electron-phonon scattering in GaAs and CH 3 NH 3 PbI 3

AU - Galvani, Benoit

AU - Delamarre, Amaury

AU - Suchet, Daniel

AU - Bescond, Marc

AU - Michelini, Fabienne

AU - Lannoo, Michel

AU - Sugyiama, Masakazu

AU - Even, Jacky

AU - Guillemoles, Jean François

AU - Cavassilas, Nicolas

PY - 2018/11/26

Y1 - 2018/11/26

N2 - This work highlights the intrinsic modification of the electronic density-of-states due to electron-phonon scattering. Using a quantum model we show that, by broadening the density-of-states in the bandgap, the scattering changes the absorption/emission ratio and then some photovoltaic parameters like V oc . For the high mobility GaAs material we obtain a moderate V oc reduction of 4mV. In the highly polar CH 3 NH 3 PbI 3 perovskite material, even through the mobility is low, the broadening in the density-of-states is limited by the small phonon energy and then the V oc reduction remains inferior to 41mV.

AB - This work highlights the intrinsic modification of the electronic density-of-states due to electron-phonon scattering. Using a quantum model we show that, by broadening the density-of-states in the bandgap, the scattering changes the absorption/emission ratio and then some photovoltaic parameters like V oc . For the high mobility GaAs material we obtain a moderate V oc reduction of 4mV. In the highly polar CH 3 NH 3 PbI 3 perovskite material, even through the mobility is low, the broadening in the density-of-states is limited by the small phonon energy and then the V oc reduction remains inferior to 41mV.

U2 - 10.1109/PVSC.2018.8547650

DO - 10.1109/PVSC.2018.8547650

M3 - Conference contribution

AN - SCOPUS:85062096789

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 1796

EP - 1799

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Galvani B, Delamarre A, Suchet D, Bescond M, Michelini F, Lannoo M et al. Reduction of V _oc induced by the electron-phonon scattering in GaAs and CH ₃ NH ₃ PbI ₃ Dans 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1796-1799. 8547650. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547650

Reduction of V oc induced by the electron-phonon scattering in GaAs and CH 3 NH 3 PbI 3