Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

Shihao Ding; Bozhang Dong; Heming Huang; John E. Bowers; Frédéric Grillot

doi:10.1049/ell2.12440

Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

Shihao Ding
, Bozhang Dong
, Heming Huang
, John E. Bowers
, Frédéric Grillot

Institut Polytechnique de Paris
University of California, Santa Barbara
University of New Mexico

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.

langue originale	Anglais
Pages (de - à)	363-365
Nombre de pages	3
journal	Electronics Letters
Volume	58
Numéro de publication	9
Les DOIs	https://doi.org/10.1049/ell2.12440
état	Publié - 1 avr. 2022

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10.1049/ell2.12440

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title = "Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation",

abstract = "This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.",

author = "Shihao Ding and Bozhang Dong and Heming Huang and Bowers, \{John E.\} and Fr{\'e}d{\'e}ric Grillot",

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doi = "10.1049/ell2.12440",

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AU - Ding, Shihao

AU - Dong, Bozhang

AU - Huang, Heming

AU - Bowers, John E.

AU - Grillot, Frédéric

PY - 2022/4/1

Y1 - 2022/4/1

N2 - This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.

AB - This paper reports on the reflection sensitivity under direct modulation operation of a 1.3 μm InAs/GaAs quantum dot laser that is epitaxially grown on silicon. The quantum dot laser exhibits a high tolerance to back reflections with low error transmission at 6 Gbps. This study paves the way for developing directly modulated isolator-free photonic integrated circuits based on quantum dot lasers.

UR - https://www.scopus.com/pages/publications/85126019451

U2 - 10.1049/ell2.12440

DO - 10.1049/ell2.12440

M3 - Article

AN - SCOPUS:85126019451

SN - 0013-5194

VL - 58

SP - 363

EP - 365

JO - Electronics Letters

JF - Electronics Letters

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Reflection sensitivity of InAs/GaAs epitaxial quantum dot lasers under direct modulation

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