@inproceedings{fa05ba33eb084939b3ab290a30ddd16f,
title = "Reflective amplified modulator operating at 40 Gbps up to 85°C as colorless transceiver for optical access networks",
abstract = "In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver.",
keywords = "Remote amplified modulator, electro-absorption modulator, indium phosphide, optical access networks, photonic integrated circuit",
author = "K. Lawniczuk and O. Patard and R. Guillamet and N. Chimot and A. Garreau and C. Kazmierski and G. Aubin and K. Merghem",
year = "2012",
month = dec,
day = "1",
doi = "10.1109/ICIPRM.2012.6403334",
language = "English",
isbn = "9781467317252",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "116--119",
booktitle = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012",
note = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 ; Conference date: 27-08-2012 Through 30-08-2012",
}