@inproceedings{914bf4a11982435caf957ea122ee9973,
title = "Relative intensity noise of silicon-based quantum dot lasers",
abstract = "This work experimentally investigates the relative intensity noise (RIN) of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocations density and the p-modulation doped GaAs barrier layer in the active region, a RIN level as low as -150 dB/Hz at 9 GHz is demonstrated. The results show that the p-doping decreases the high-frequency RIN and the damping factor. In the latter, a damping factor up to 30 GHz at three times the threshold is extracted from the RIN spectrum along with a K-factor of 1.7 ns. These results pave the way for high speed and low noise QD devices for future integrated photonics technologies.",
keywords = "Quantum dot lasers, Relative intensity noise",
author = "J. Duan and H. Huang and D. Jung and Norman, \{J. C.\} and Bowers, \{J. E.\} and F. Grillot",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Compound Semiconductor Week, CSW 2019 ; Conference date: 19-05-2019 Through 23-05-2019",
year = "2019",
month = may,
day = "1",
doi = "10.1109/ICIPRM.2019.8819368",
language = "English",
series = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",
}