Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

F. Kail; J. Farjas; P. Roura; C. Secouard; O. Nos; J. Bertomeu; F. Alzina; P. Roca I Cabarrocas

doi:10.1063/1.3464961

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

F. Kail
, J. Farjas
, P. Roura
, C. Secouard
, O. Nos
, J. Bertomeu
, F. Alzina
, P. Roca I Cabarrocas

University of Girona
Univ. Joseph Fourier-Grenoble 1
University of Barcelona
University of São Paulo

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

10 Citations (Scopus)

Résumé

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.

langue originale	Anglais
Numéro d'article	031918
journal	Applied Physics Letters
Volume	97
Numéro de publication	3
Les DOIs	https://doi.org/10.1063/1.3464961
état	Publié - 19 juil. 2010

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10.1063/1.3464961

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@article{9d98a3993f1547cda47aafcf468ff957,

title = "Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments",

abstract = "The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.",

author = "F. Kail and J. Farjas and P. Roura and C. Secouard and O. Nos and J. Bertomeu and F. Alzina and \{Roca I Cabarrocas\}, P.",

year = "2010",

month = jul,

day = "19",

doi = "10.1063/1.3464961",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

AU - Kail, F.

AU - Farjas, J.

AU - Roura, P.

AU - Secouard, C.

AU - Nos, O.

AU - Bertomeu, J.

AU - Alzina, F.

AU - Roca I Cabarrocas, P.

PY - 2010/7/19

Y1 - 2010/7/19

N2 - The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.

AB - The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.

U2 - 10.1063/1.3464961

DO - 10.1063/1.3464961

M3 - Article

AN - SCOPUS:77956214958

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031918

ER -

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

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