Reliable majority voter based on spin transfer torque magnetic tunnel junction device

A reliable majority voter circuit using a nanometre spin transfer torque magnetic tunnel junction (STT-MTJ) is presented. The circuit tolerates single transient faults and manages process variations due to technology downscaling. The use of this magnetic device brings non-volatility memory to logic circuits and promises to overcome the rising standby power issue. By using the STMicroelectronics fully depleted silicon on insulator 28 nm design kit and a precise STT-MTJ compact model, electrical simulations have been carried out to show its low-power and high reliability performances.