Résumé
The bulk and surface effects on the amorphous-to-crystalline transition in ns-Si:H films deposited in a pulsed rf glow discharge were studied in relation to the plasma duration used for the deposition. The role of lattice expansion in lowering the crystallization threshold was confirmed. Nonetheless, the contribution of the surface roughness in lowering Ecryst was also emphasized.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 529-535 |
| Nombre de pages | 7 |
| journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 18 |
| Numéro de publication | 2 |
| Les DOIs | |
| état | Publié - 1 mars 2000 |
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