Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition

Using metal organic chemical vapor deposition, we have fabricated self-organized quantum dots that emit efficiently at 1.3 μm at room temperature. They are grown on GaAs and consist of InAs covered with an InGaAs cap layer. Their density is 2 X 10¹⁰Cm^-2 as determined by transmission electron microscopy. Room-temperature photoluminescence shows a 36 meV broad line at 1.3 μm, corresponding to the quantum-dot ground state, with excellent uniformity across the wafer. The efficiency of this emission is reduced only by a factor of 4 with respect to low temperature showing the high quality of the sample.