Résumé
Electroluminescence associated with impact excitation or ionization of deep Cr2+ impurity centers in bulk ZnSe is reported. A broad signal of mid-infrared luminescence between 2 and 3 μm is observed once the biased bulk ZnSe device runs into a nonlinear conduction regime. Optical powers in the nanowatt range have been measured at room temperature. The different mechanisms involved in this intracenter infrared light emission are discussed.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 3501-3503 |
| Nombre de pages | 3 |
| journal | Optics Letters |
| Volume | 31 |
| Numéro de publication | 23 |
| Les DOIs | |
| état | Publié - 1 déc. 2006 |
| Modification externe | Oui |
Empreinte digitale
Examiner les sujets de recherche de « Room-temperature electroluminescence in the mid-infrared (2-3 μm) from bulk chromium-doped ZnSe ». Ensemble, ils forment une empreinte digitale unique.Contient cette citation
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver