Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface

S. Colonna; F. Ronci; A. Cricenti; L. Perfetti; H. Berger; M. Grioni

doi:10.1143/JJAP.45.1950

Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe₂ surface

S. Colonna
, F. Ronci
, A. Cricenti
, L. Perfetti
, H. Berger
, M. Grioni

Consiglio Nazionale delle Ricerche
Department of Physics and Astronomy
Vanderbilt University
ENAC-IIC-GEL
Institut de Physique de la Matiere Complexe

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

2 Citations (Scopus)

Résumé

We present scanning tunneling microscopy (STM) measurements at the TaSe₂ surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.

langue originale	Anglais
Pages (de - à)	1950-1952
Nombre de pages	3
journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Numéro de publication	3 B
Les DOIs	https://doi.org/10.1143/JJAP.45.1950
état	Publié - 27 mars 2006
Modification externe	Oui

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10.1143/JJAP.45.1950

Contient cette citation

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title = "Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface",

abstract = "We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.",

keywords = "Carge density wave, Mott transition, STM, TaSe",

author = "S. Colonna and F. Ronci and A. Cricenti and L. Perfetti and H. Berger and M. Grioni",

year = "2006",

month = mar,

day = "27",

doi = "10.1143/JJAP.45.1950",

language = "English",

volume = "45",

pages = "1950--1952",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

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Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe₂ surface. / Colonna, S.; Ronci, F.; Cricenti, A. et al.
Dans: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol 45, Numéro 3 B, 27.03.2006, p. 1950-1952.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface

AU - Colonna, S.

AU - Ronci, F.

AU - Cricenti, A.

AU - Perfetti, L.

AU - Berger, H.

AU - Grioni, M.

PY - 2006/3/27

Y1 - 2006/3/27

N2 - We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.

AB - We present scanning tunneling microscopy (STM) measurements at the TaSe2 surface showing a first order process leading to a surface Mott transition. This metal to insulator transition is triggered by the commensurate charge density wave (CDW) which set up at 475 K. The electronic structure rearrangement due to the new periodicity gives rise to a half filled sub-band prone to the localization phenomena. This transition results fully developed below 250 K in agreement with previous photoemission measurements.

KW - Carge density wave

KW - Mott transition

KW - STM

KW - TaSe

U2 - 10.1143/JJAP.45.1950

DO - 10.1143/JJAP.45.1950

M3 - Article

AN - SCOPUS:33645521843

SN - 0021-4922

VL - 45

SP - 1950

EP - 1952

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3 B

ER -

Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe2 surface

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Scanning tunneling microscopy observation of a mott-insulator phase at the 1T-TaSe₂ surface