Screening models and simplified GW approaches: Si & GaN as test cases

M. Palummo; R. Del Sole; Lucia Reining; F. Bechstedt; G. Cappellini

doi:10.1016/0038-1098(95)00199-9

Screening models and simplified GW approaches: Si & GaN as test cases

M. Palummo
, R. Del Sole
, Lucia Reining
, F. Bechstedt
, G. Cappellini

University of Rome “Tor Vergata”
Friedrich-Schiller University
Universitá di Cagliari

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We compare models of diagonal and off-diagonal screening with LDA-RPA full calculations in Si and cubic GaN. Simplified GW calculations relying on these models are also compared with full GW calculations for the same materials. A recipe for simplified GW calculations is obtained which works well for small, moderate and wide gap semiconductors.

langue originale	Anglais
Pages (de - à)	393-398
Nombre de pages	6
journal	Solid State Communications
Volume	95
Numéro de publication	6
Les DOIs	https://doi.org/10.1016/0038-1098(95)00199-9
état	Publié - 1 janv. 1995

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10.1016/0038-1098(95)00199-9

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@article{da1442ae4492415eabcd78aa69219ad6,

title = "Screening models and simplified GW approaches: Si \& GaN as test cases",

abstract = "We compare models of diagonal and off-diagonal screening with LDA-RPA full calculations in Si and cubic GaN. Simplified GW calculations relying on these models are also compared with full GW calculations for the same materials. A recipe for simplified GW calculations is obtained which works well for small, moderate and wide gap semiconductors.",

author = "M. Palummo and \{Del Sole\}, R. and Lucia Reining and F. Bechstedt and G. Cappellini",

year = "1995",

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T1 - Screening models and simplified GW approaches

T2 - Si & GaN as test cases

AU - Palummo, M.

AU - Del Sole, R.

AU - Reining, Lucia

AU - Bechstedt, F.

AU - Cappellini, G.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We compare models of diagonal and off-diagonal screening with LDA-RPA full calculations in Si and cubic GaN. Simplified GW calculations relying on these models are also compared with full GW calculations for the same materials. A recipe for simplified GW calculations is obtained which works well for small, moderate and wide gap semiconductors.

AB - We compare models of diagonal and off-diagonal screening with LDA-RPA full calculations in Si and cubic GaN. Simplified GW calculations relying on these models are also compared with full GW calculations for the same materials. A recipe for simplified GW calculations is obtained which works well for small, moderate and wide gap semiconductors.

U2 - 10.1016/0038-1098(95)00199-9

DO - 10.1016/0038-1098(95)00199-9

M3 - Article

AN - SCOPUS:0029359130

SN - 0038-1098

VL - 95

SP - 393

EP - 398

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Screening models and simplified GW approaches: Si & GaN as test cases

Résumé

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