Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

The origin of a compensation mechanism in highly halogen doped CdTe grown by molecular beam epitaxy is investigated by means of electrical transport, photoluminescence and positron annihilation measurements. From the data one can identify vacancies to play an important part in the compensation mechanism at high doping levels. The behaviour of highly doped compensated CdTe layers in the electrical transport measurements as well as in photoluminescence turned out to be dominated by potential fluctuations, which are probably created due to the random distribution of donor impurities and compensating defects.