Résumé
The electrochemical oxidation of silicon under high potentials (10-30 V) was investigated in weakly alkaline low-buffered fluoride media. The cyclic voltammogram exhibits a hysteresis of several orders of magnitude. Potentiostatically grown oxide films are either pale gray or show thin-film interference colors. Optical spectroscopy indicates here a porous silica layer on a thin compact SiO2 film. Electron microscopy shows that the brilliant films consist of granular SiO2 particles with sub-100 nm diameters with a homogeneous film thickness over the etching area. For U > 15 V micrometer-sized corrugations lead to a gray appearance. These macrostructures self-organize in a close-packed lattice with narrowly distributed dimensions.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | B25-B29 |
| journal | Electrochemical and Solid-State Letters |
| Volume | 8 |
| Numéro de publication | 9 |
| Les DOIs | |
| état | Publié - 29 sept. 2005 |
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