Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

J. Duan; H. Huang; D. Jung; Z. Zhang; J. Norman; J. E. Bowers; F. Grillot

doi:10.1063/1.5025879

Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

J. Duan
, H. Huang
, D. Jung
, Z. Zhang
, J. Norman
, J. E. Bowers
, F. Grillot

Université Paris-Saclay
University of California, Santa Barbara
University of California
University of New Mexico

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

This work reports on the ultra-low linewidth enhancement factor (α_H-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an α_H value of 0.13 that is rather independent of the temperature range (288 K-308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.

langue originale	Anglais
Numéro d'article	251111
journal	Applied Physics Letters
Volume	112
Numéro de publication	25
Les DOIs	https://doi.org/10.1063/1.5025879
état	Publié - 18 juin 2018
Modification externe	Oui

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10.1063/1.5025879

Contient cette citation

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title = "Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor",

abstract = "This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K-308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.",

author = "J. Duan and H. Huang and D. Jung and Z. Zhang and J. Norman and Bowers, \{J. E.\} and F. Grillot",

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AU - Norman, J.

AU - Bowers, J. E.

AU - Grillot, F.

PY - 2018/6/18

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AB - This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K-308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.

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DO - 10.1063/1.5025879

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Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

Résumé

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