Shallow traps and positron dynamics in epitaxial silicon carbide

D. T. Britton; M. F. Barthe; C. Corbel; P. Desgardin; W. Egger; P. Sperr; G. Kögel; W. Triftshäuser

doi:10.1016/S0169-4332(02)00110-1

Shallow traps and positron dynamics in epitaxial silicon carbide

D. T. Britton
, M. F. Barthe
, C. Corbel
, P. Desgardin
, W. Egger
, P. Sperr
, G. Kögel
, W. Triftshäuser

University of Cape Town
CNRS
Bundeswehr University Munich

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

We have used slow positron beam-based positron lifetime spectroscopy to study positron diffusion in thick epitaxial n-type 6H-SiC layers. The layers are considerably thicker than the maximum positron penetration depth, and can therefore, be treated as homogeneous semi-infinite bulk material in an analysis including the time-dependent diffusion of a single group of probe particles. Temperature-dependent measurements show a reduction in positron diffusion at low temperatures, which has been interpreted by an increase in trapping to negatively charged defect states.

langue originale	Anglais
Pages (de - à)	122-126
Nombre de pages	5
journal	Applied Surface Science
Volume	194
Numéro de publication	1-4
Les DOIs	https://doi.org/10.1016/S0169-4332(02)00110-1
état	Publié - 21 juin 2002
Evénement	9th International Workshop on Slow Positron Beam Techniques - Dresden, Allemagne Durée: 16 sept. 2001 → 22 sept. 2001

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10.1016/S0169-4332(02)00110-1

Contient cette citation

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title = "Shallow traps and positron dynamics in epitaxial silicon carbide",

abstract = "We have used slow positron beam-based positron lifetime spectroscopy to study positron diffusion in thick epitaxial n-type 6H-SiC layers. The layers are considerably thicker than the maximum positron penetration depth, and can therefore, be treated as homogeneous semi-infinite bulk material in an analysis including the time-dependent diffusion of a single group of probe particles. Temperature-dependent measurements show a reduction in positron diffusion at low temperatures, which has been interpreted by an increase in trapping to negatively charged defect states.",

keywords = "Diffusion, Native defects, Positron lifetime, SiC, Trapping",

author = "Britton, \{D. T.\} and Barthe, \{M. F.\} and C. Corbel and P. Desgardin and W. Egger and P. Sperr and G. K{\"o}gel and W. Triftsh{\"a}user",

year = "2002",

month = jun,

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doi = "10.1016/S0169-4332(02)00110-1",

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TY - JOUR

T1 - Shallow traps and positron dynamics in epitaxial silicon carbide

AU - Britton, D. T.

AU - Barthe, M. F.

AU - Corbel, C.

AU - Desgardin, P.

AU - Egger, W.

AU - Sperr, P.

AU - Kögel, G.

AU - Triftshäuser, W.

PY - 2002/6/21

Y1 - 2002/6/21

N2 - We have used slow positron beam-based positron lifetime spectroscopy to study positron diffusion in thick epitaxial n-type 6H-SiC layers. The layers are considerably thicker than the maximum positron penetration depth, and can therefore, be treated as homogeneous semi-infinite bulk material in an analysis including the time-dependent diffusion of a single group of probe particles. Temperature-dependent measurements show a reduction in positron diffusion at low temperatures, which has been interpreted by an increase in trapping to negatively charged defect states.

AB - We have used slow positron beam-based positron lifetime spectroscopy to study positron diffusion in thick epitaxial n-type 6H-SiC layers. The layers are considerably thicker than the maximum positron penetration depth, and can therefore, be treated as homogeneous semi-infinite bulk material in an analysis including the time-dependent diffusion of a single group of probe particles. Temperature-dependent measurements show a reduction in positron diffusion at low temperatures, which has been interpreted by an increase in trapping to negatively charged defect states.

KW - Diffusion

KW - Native defects

KW - Positron lifetime

KW - SiC

KW - Trapping

U2 - 10.1016/S0169-4332(02)00110-1

DO - 10.1016/S0169-4332(02)00110-1

M3 - Conference article

AN - SCOPUS:0037150987

SN - 0169-4332

VL - 194

SP - 122

EP - 126

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

T2 - 9th International Workshop on Slow Positron Beam Techniques

Y2 - 16 September 2001 through 22 September 2001

ER -

Shallow traps and positron dynamics in epitaxial silicon carbide

Résumé

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