Résumé
The measurement of resonant Rayleigh scattering (RRS) in semiconductor microcavities have been investigated using ultrafast spectral interferometry. The measurements identifies the RRS component of the secondary radiation, and distinguishes between RRS and photoluminescence. The sample is a GaAs cavity with a single 8 nm Ga0.96In0.04As quantum well at the anti-node, surrounded by two Ga0.9Al0.1As/AlAs Bragg mirrors. The unambiguous identification of RRS, and its angular distribution, dynamics, and dependence on cavity detuning, provide unique complementary information on microcavities.
| langue originale | Anglais |
|---|---|
| Pages | 302-303 |
| Nombre de pages | 2 |
| état | Publié - 1 janv. 1999 |
| Modification externe | Oui |
| Evénement | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Durée: 23 mai 1999 → 28 mai 1999 |
Une conférence
| Une conférence | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) |
|---|---|
| La ville | Baltimore, MD, USA |
| période | 23/05/99 → 28/05/99 |
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Examiner les sujets de recherche de « Signature of resonant Rayleigh scattering from microcavity polaritons: Angularly peaked coherent emission ». Ensemble, ils forment une empreinte digitale unique.Contient cette citation
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