Single mode TEM 00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate

A. Laurain; A. Michon; A. Garnache; G. Beaudoin; C. Roblin; E. Cambril; I. Sagnes

Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate

A. Laurain
, A. Michon
, A. Garnache
, G. Beaudoin
, C. Roblin
, E. Cambril
, I. Sagnes

IES Institut d'Electronique et des Systèmes
CNRS

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantumwell vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 μm with 10 mW output power. The external cavity provides a circular TEM ₀₀ beam close to diffraction limit (M ² = 1.2). The laser exhibits single frequency operation (< 30 MHz), a side mode suppression ratio > 37 dB and linear light polarization (> 20 dB). Thermal, electrical and optical properties of the device are studied.

langue originale	Anglais
titre	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
état	Publié - 1 déc. 2011
Evénement	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Allemagne Durée: 22 mai 2011 → 26 mai 2011

Série de publications

Nom	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (imprimé)	1092-8669

Une conférence

Une conférence	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Pays/Territoire	Allemagne
La ville	Berlin
période	22/05/11 → 26/05/11

Contient cette citation

Laurain, A., Michon, A., Garnache, A., Beaudoin, G., Roblin, C., Cambril, E., & Sagnes, I. (2011). Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate. Dans 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 Article 5978327 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Laurain, A. ; Michon, A. ; Garnache, A. et al. / Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

@inproceedings{1b5fd52ce545468abe1b42a9a8aa7200,

title = "Single mode TEM 00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate",

abstract = "We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantumwell vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 μm with 10 mW output power. The external cavity provides a circular TEM 00 beam close to diffraction limit (M 2 = 1.2). The laser exhibits single frequency operation (< 30 MHz), a side mode suppression ratio > 37 dB and linear light polarization (> 20 dB). Thermal, electrical and optical properties of the device are studied.",

author = "A. Laurain and A. Michon and A. Garnache and G. Beaudoin and C. Roblin and E. Cambril and I. Sagnes",

year = "2011",

month = dec,

day = "1",

language = "English",

isbn = "9781457717536",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

booktitle = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011",

note = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 ; Conference date: 22-05-2011 Through 26-05-2011",

}

Laurain, A, Michon, A, Garnache, A, Beaudoin, G, Roblin, C, Cambril, E & Sagnes, I 2011, Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate. Dans 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011., 5978327, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, Allemagne, 22/05/11.

Single mode TEM ₀₀ large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate. / Laurain, A.; Michon, A.; Garnache, A. et al.
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011. 2011. 5978327 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Single mode TEM 00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate

AU - Laurain, A.

AU - Michon, A.

AU - Garnache, A.

AU - Beaudoin, G.

AU - Roblin, C.

AU - Cambril, E.

AU - Sagnes, I.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantumwell vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 μm with 10 mW output power. The external cavity provides a circular TEM 00 beam close to diffraction limit (M 2 = 1.2). The laser exhibits single frequency operation (< 30 MHz), a side mode suppression ratio > 37 dB and linear light polarization (> 20 dB). Thermal, electrical and optical properties of the device are studied.

AB - We present the design, technology and performances of single-frequency GaAs-based electrically-pumped quantumwell vertical external-cavity surface-emitting lasers. We report on room-temperature continuous-wave laser emission at 1 μm with 10 mW output power. The external cavity provides a circular TEM 00 beam close to diffraction limit (M 2 = 1.2). The laser exhibits single frequency operation (< 30 MHz), a side mode suppression ratio > 37 dB and linear light polarization (> 20 dB). Thermal, electrical and optical properties of the device are studied.

M3 - Conference contribution

AN - SCOPUS:84858175809

SN - 9781457717536

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011

Y2 - 22 May 2011 through 26 May 2011

ER -