Single oriented carbon nanotubes growth on array of processed microelectrodes

F. Le Normand; C. S. Cojocaru; B. Vigolo; E. Minoux; P. Legagneux; I. Kleps; F. Craciunoiu; A. Angelescu; M. Miu; M. Smion

Single oriented carbon nanotubes growth on array of processed microelectrodes

F. Le Normand
, C. S. Cojocaru
, B. Vigolo
, E. Minoux
, P. Legagneux
, I. Kleps
, F. Craciunoiu
, A. Angelescu
, M. Miu
, M. Smion

UMR 7504 CNRS-ULP
Thales Research & Technology
National Institute for Research and Development in Microtechnologies (IMT)

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

Résumé

The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.

langue originale	Anglais
Pages	97-100
Nombre de pages	4
état	Publié - 1 janv. 2004
Modification externe	Oui
Evénement	27th International Semiconductor Conference, CAS 2004 - Sinaia, Roumanie Durée: 4 oct. 2004 → 6 oct. 2004

Une conférence

Une conférence	27th International Semiconductor Conference, CAS 2004
Pays/Territoire	Roumanie
La ville	Sinaia
période	4/10/04 → 6/10/04

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title = "Single oriented carbon nanotubes growth on array of processed microelectrodes",

abstract = "The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.",

author = "\{Le Normand\}, F. and Cojocaru, \{C. S.\} and B. Vigolo and E. Minoux and P. Legagneux and I. Kleps and F. Craciunoiu and A. Angelescu and M. Miu and M. Smion",

year = "2004",

month = jan,

day = "1",

language = "English",

pages = "97--100",

note = "27th International Semiconductor Conference, CAS 2004 ; Conference date: 04-10-2004 Through 06-10-2004",

}

TY - CONF

T1 - Single oriented carbon nanotubes growth on array of processed microelectrodes

AU - Le Normand, F.

AU - Cojocaru, C. S.

AU - Vigolo, B.

AU - Minoux, E.

AU - Legagneux, P.

AU - Kleps, I.

AU - Craciunoiu, F.

AU - Angelescu, A.

AU - Miu, M.

AU - Smion, M.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.

AB - The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for selective etch. Based on a new technology of carbon nanotubes selective growth on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.

UR - https://www.scopus.com/pages/publications/27844606817

M3 - Paper

AN - SCOPUS:27844606817

SP - 97

EP - 100

T2 - 27th International Semiconductor Conference, CAS 2004

Y2 - 4 October 2004 through 6 October 2004

ER -

Single oriented carbon nanotubes growth on array of processed microelectrodes

Résumé

Une conférence

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