Single photon emission from individual GaAs quantum dots

J. Hours; S. Varoutsis; M. Gallart; J. Bloch; I. Robert-Philip; A. Cavanna; I. Abram; F. Laruelle; J. M. Gérard

doi:10.1063/1.1563050

Single photon emission from individual GaAs quantum dots

J. Hours
, S. Varoutsis
, M. Gallart
, J. Bloch
, I. Robert-Philip
, A. Cavanna
, I. Abram
, F. Laruelle
, J. M. Gérard

École Polytechnique

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The single photon emission on a quantum dot formed at fluctuations of the interface of a Gallium arsenide (GaAs) quantum well was discussed. Under pulsed nonresonant excitation, the quantum dots emitted a single photon per pulse. This showed that after the photon emission there was no refill of the dot by the nearby reservoir of delocalized states.

langue originale	Anglais
Pages (de - à)	2206-2208
Nombre de pages	3
journal	Applied Physics Letters
Volume	82
Numéro de publication	14
Les DOIs	https://doi.org/10.1063/1.1563050
état	Publié - 7 avr. 2003

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10.1063/1.1563050

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title = "Single photon emission from individual GaAs quantum dots",

abstract = "The single photon emission on a quantum dot formed at fluctuations of the interface of a Gallium arsenide (GaAs) quantum well was discussed. Under pulsed nonresonant excitation, the quantum dots emitted a single photon per pulse. This showed that after the photon emission there was no refill of the dot by the nearby reservoir of delocalized states.",

author = "J. Hours and S. Varoutsis and M. Gallart and J. Bloch and I. Robert-Philip and A. Cavanna and I. Abram and F. Laruelle and G{\'e}rard, \{J. M.\}",

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journal = "Applied Physics Letters",

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T1 - Single photon emission from individual GaAs quantum dots

AU - Hours, J.

AU - Varoutsis, S.

AU - Gallart, M.

AU - Bloch, J.

AU - Robert-Philip, I.

AU - Cavanna, A.

AU - Abram, I.

AU - Laruelle, F.

AU - Gérard, J. M.

PY - 2003/4/7

Y1 - 2003/4/7

N2 - The single photon emission on a quantum dot formed at fluctuations of the interface of a Gallium arsenide (GaAs) quantum well was discussed. Under pulsed nonresonant excitation, the quantum dots emitted a single photon per pulse. This showed that after the photon emission there was no refill of the dot by the nearby reservoir of delocalized states.

AB - The single photon emission on a quantum dot formed at fluctuations of the interface of a Gallium arsenide (GaAs) quantum well was discussed. Under pulsed nonresonant excitation, the quantum dots emitted a single photon per pulse. This showed that after the photon emission there was no refill of the dot by the nearby reservoir of delocalized states.

UR - https://www.scopus.com/pages/publications/0037425266

U2 - 10.1063/1.1563050

DO - 10.1063/1.1563050

M3 - Article

AN - SCOPUS:0037425266

SN - 0003-6951

VL - 82

SP - 2206

EP - 2208

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Single photon emission from individual GaAs quantum dots

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