SiOxpatterned based substrates implemented in Cu(InGa)Se2ultrathin solar cells: Optimum thickness

Kevin Oliveira; Wei Chao Chen; Jackson Lontchi; Antonio J.N. Oliveira; Jennifer P. Teixeira; Denis Flandre; Marika Edoff; Paulo A. Fernandes; Pedro M.P. Salome

doi:10.1109/PVSC43889.2021.9518516

SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness

Kevin Oliveira
, Wei Chao Chen
, Jackson Lontchi
, Antonio J.N. Oliveira
, Jennifer P. Teixeira
, Denis Flandre
, Marika Edoff
, Paulo A. Fernandes
, Pedro M.P. Salome

INL – International Iberian Nanotechnology Laboratory
The Ångström Laboratory
University of Louvain
University of Aveiro
Polytechnic Institute of Porto

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2%, a 1.3% absolute improvement over the conventional substrate (without SiOx).

langue originale	Anglais
titre	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	928-930
Nombre de pages	3
ISBN (Electronique)	9781665419222
Les DOIs	https://doi.org/10.1109/PVSC43889.2021.9518516
état	Publié - 20 juin 2021
Modification externe	Oui
Evénement	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, États-Unis Durée: 20 juin 2021 → 25 juin 2021

Série de publications

Nom	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (imprimé)	0160-8371

Une conférence

Une conférence	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Pays/Territoire	États-Unis
La ville	Fort Lauderdale
période	20/06/21 → 25/06/21

Accès au document

10.1109/PVSC43889.2021.9518516

Contient cette citation

Oliveira, K., Chen, W. C., Lontchi, J., Oliveira, A. J. N., Teixeira, J. P., Flandre, D., Edoff, M., Fernandes, P. A., & Salome, P. M. P. (2021). SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness. Dans 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (p. 928-930). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9518516

@inproceedings{2182beb912c44eed8f05cd93ffa8ba72,

title = "SiOxpatterned based substrates implemented in Cu(InGa)Se2ultrathin solar cells: Optimum thickness",

abstract = "Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2\%, a 1.3\% absolute improvement over the conventional substrate (without SiOx).",

keywords = "Cu(In, Ga)Se2, Rear Passivation Strategy, SiOx",

author = "Kevin Oliveira and Chen, \{Wei Chao\} and Jackson Lontchi and Oliveira, \{Antonio J.N.\} and Teixeira, \{Jennifer P.\} and Denis Flandre and Marika Edoff and Fernandes, \{Paulo A.\} and Salome, \{Pedro M.P.\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9518516",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "928--930",

booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",

}

Oliveira, K, Chen, WC, Lontchi, J, Oliveira, AJN, Teixeira, JP, Flandre, D, Edoff, M, Fernandes, PA & Salome, PMP 2021, SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness. Dans 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., p. 928-930, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, États-Unis, 20/06/21. https://doi.org/10.1109/PVSC43889.2021.9518516

SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness. / Oliveira, Kevin; Chen, Wei Chao; Lontchi, Jackson et al.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 928-930 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - SiOxpatterned based substrates implemented in Cu(InGa)Se2ultrathin solar cells

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

AU - Oliveira, Kevin

AU - Chen, Wei Chao

AU - Lontchi, Jackson

AU - Oliveira, Antonio J.N.

AU - Teixeira, Jennifer P.

AU - Flandre, Denis

AU - Edoff, Marika

AU - Fernandes, Paulo A.

AU - Salome, Pedro M.P.

PY - 2021/6/20

Y1 - 2021/6/20

N2 - Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2%, a 1.3% absolute improvement over the conventional substrate (without SiOx).

AB - Interface recombination in sub-μm optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2%, a 1.3% absolute improvement over the conventional substrate (without SiOx).

KW - Cu(In

KW - Ga)Se2

KW - Rear Passivation Strategy

KW - SiOx

U2 - 10.1109/PVSC43889.2021.9518516

DO - 10.1109/PVSC43889.2021.9518516

M3 - Conference contribution

AN - SCOPUS:85115926171

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 928

EP - 930

BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 20 June 2021 through 25 June 2021

ER -

Oliveira K, Chen WC, Lontchi J, Oliveira AJN, Teixeira JP, Flandre D et al. SiO_xpatterned based substrates implemented in Cu(InGa)Se₂ultrathin solar cells: Optimum thickness. Dans 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 928-930. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9518516