Solid phase epitaxial regrowth of ion-implanted amorphized InP

C. Licoppe; Y. I. Nissim; P. Krauz; P. Henoc

doi:10.1063/1.97154

Solid phase epitaxial regrowth of ion-implanted amorphized InP

C. Licoppe
, Y. I. Nissim
, P. Krauz
, P. Henoc

Orange Labs

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

15 Citations (Scopus)

Résumé

Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230-330°C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy E_a=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.

langue originale	Anglais
Pages (de - à)	316-318
Nombre de pages	3
journal	Applied Physics Letters
Volume	49
Numéro de publication	6
Les DOIs	https://doi.org/10.1063/1.97154
état	Publié - 1 déc. 1986
Modification externe	Oui

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title = "Solid phase epitaxial regrowth of ion-implanted amorphized InP",

abstract = "Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230-330°C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.",

author = "C. Licoppe and Nissim, \{Y. I.\} and P. Krauz and P. Henoc",

year = "1986",

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AU - Licoppe, C.

AU - Nissim, Y. I.

AU - Krauz, P.

AU - Henoc, P.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230-330°C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.

AB - Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230-330°C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the amorphous/crystalline interface occurs during growth. The dependence of interface roughening on crystal orientation is studied. In all cases, it is shown that the interface is degraded much faster than in GaAs. The comparison between the two compound semiconductors is based on chemical disorder in the amorphized layer.

U2 - 10.1063/1.97154

DO - 10.1063/1.97154

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Solid phase epitaxial regrowth of ion-implanted amorphized InP

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