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Spectroscopic Signatures of a Bandwidth-Controlled Mott Transition at the Surface of [Formula presented]

  • ENAC-IIC-GEL
  • Center for Atomic-scale Materials Physics (CAMP)
  • Université Paris-Saclay
  • Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
  • Synchrotron Radiation Center

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

High-resolution angle-resolved photoemission data show that a metal-insulator Mott transition occurs at the surface of the quasi-two-dimensional compound [Formula presented]. The transition is driven by the narrowing of the Ta [Formula presented] band induced by a temperature-dependent modulation of the atomic positions. A dynamical mean-field theory calculation of the spectral function of the half-filled Hubbard model captures the main qualitative feature of the data, namely, the rapid transfer of spectral weight from the observed quasiparticle peak at the Fermi surface to the Hubbard bands, as the correlation gap opens up.

langue originaleAnglais
Pages (de - à)4
Nombre de pages1
journalPhysical Review Letters
Volume90
Numéro de publication16
Les DOIs
étatPublié - 1 janv. 2003
Modification externeOui

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