Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1-xAs/GaAs types

M. Chaouache; R. Chtourou; F. F. Charfi; J. Yves Marzin; J. Bloch

doi:10.1016/S0928-4931(02)00094-2

Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells Al_xGa_1-xAs/GaAs types

M. Chaouache
, R. Chtourou
, F. F. Charfi
, J. Yves Marzin
, J. Bloch

École Polytechnique

University of Carthage, Institut Préparatoire aux Études Scientifiques et Techniques
CNRS

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We report an experimental study by photoluminescene (PL) and reflectivity on shallow quantum wells of Ga_1-xAl_xAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5% to 4.5%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: "dip" for the quantum well and "peak" for the barrier exciton.

langue originale	Anglais
Pages (de - à)	227-230
Nombre de pages	4
journal	Materials Science and Engineering C
Volume	21
Numéro de publication	1-2
Les DOIs	https://doi.org/10.1016/S0928-4931(02)00094-2
état	Publié - 1 sept. 2002

Accès au document

10.1016/S0928-4931(02)00094-2

Autres fichiers et liens

Lien vers la publication dans Scopus

Contient cette citation

@article{785aeff3ce55452e8a44c1bc4a2c5cf7,

title = "Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1-xAs/GaAs types",

abstract = "We report an experimental study by photoluminescene (PL) and reflectivity on shallow quantum wells of Ga1-xAlxAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5\% to 4.5\%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: {"}dip{"} for the quantum well and {"}peak{"} for the barrier exciton.",

keywords = "Exciton, Line shape, Reflectance, Shallow quantum well",

author = "M. Chaouache and R. Chtourou and Charfi, \{F. F.\} and Marzin, \{J. Yves\} and J. Bloch",

year = "2002",

month = sep,

day = "1",

doi = "10.1016/S0928-4931(02)00094-2",

language = "English",

volume = "21",

pages = "227--230",

journal = "Materials Science and Engineering C",

issn = "0928-4931",

publisher = "Elsevier Ltd",

number = "1-2",

}

TY - JOUR

T1 - Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1-xAs/GaAs types

AU - Chaouache, M.

AU - Chtourou, R.

AU - Charfi, F. F.

AU - Marzin, J. Yves

AU - Bloch, J.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - We report an experimental study by photoluminescene (PL) and reflectivity on shallow quantum wells of Ga1-xAlxAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5% to 4.5%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: "dip" for the quantum well and "peak" for the barrier exciton.

AB - We report an experimental study by photoluminescene (PL) and reflectivity on shallow quantum wells of Ga1-xAlxAs/GaAs type performed at 10 K and varying aluminium concentration from 1.5% to 4.5%. We present an approach to the investigation of the reflectivity line shape. The calculations of the reflectance line shapes using the classical model of linear dispersion show good agreement with the experimental spectra, in particular, the two types of the line shapes: "dip" for the quantum well and "peak" for the barrier exciton.

KW - Exciton

KW - Line shape

KW - Reflectance

KW - Shallow quantum well

UR - https://www.scopus.com/pages/publications/0036740945

U2 - 10.1016/S0928-4931(02)00094-2

DO - 10.1016/S0928-4931(02)00094-2

M3 - Article

AN - SCOPUS:0036740945

SN - 0928-4931

VL - 21

SP - 227

EP - 230

JO - Materials Science and Engineering C

JF - Materials Science and Engineering C

IS - 1-2