Spin injection induced magnetization reversal

J. E. Wegrowe; T. Wade

doi:10.1117/12.475405

Spin injection induced magnetization reversal

J. E. Wegrowe
, T. Wade

ENAC-IIC-GEL
Laboratoire des Solides Irradiés

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

The usual charge carrier exploited in all electronic devices is the electron (and hole) and possesses hence, associated with its inertial masse, a spin degree of freedom. Manipulating spin-polarized electric current is the role devoted to Spintronics. Investigating the current induced magnetization switching (CIMS), consists in measuring the dynamics of the magnetization due to spin-polarized current injection. It is shown that two different mechanisms are operating. One can be described with a current dependent torque, and the other one is attributed to longitudinal spin-transfer.

langue originale	Anglais
Pages (de - à)	48-58
Nombre de pages	11
journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4999
Les DOIs	https://doi.org/10.1117/12.475405
état	Publié - 29 sept. 2003
Evénement	Quantum Sensing: Evolution and Revolution from Past to Future - San Jose, CA, États-Unis Durée: 27 janv. 2003 → 30 janv. 2003

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10.1117/12.475405

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title = "Spin injection induced magnetization reversal",

abstract = "The usual charge carrier exploited in all electronic devices is the electron (and hole) and possesses hence, associated with its inertial masse, a spin degree of freedom. Manipulating spin-polarized electric current is the role devoted to Spintronics. Investigating the current induced magnetization switching (CIMS), consists in measuring the dynamics of the magnetization due to spin-polarized current injection. It is shown that two different mechanisms are operating. One can be described with a current dependent torque, and the other one is attributed to longitudinal spin-transfer.",

keywords = "Giant magnetoresistance, Magnetic RAM, Magnetization reversal, Nanotechnology, Spin- injection, Spin-current, Spintronics, Template synthesis",

author = "Wegrowe, \{J. E.\} and T. Wade",

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TY - JOUR

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AU - Wegrowe, J. E.

AU - Wade, T.

PY - 2003/9/29

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N2 - The usual charge carrier exploited in all electronic devices is the electron (and hole) and possesses hence, associated with its inertial masse, a spin degree of freedom. Manipulating spin-polarized electric current is the role devoted to Spintronics. Investigating the current induced magnetization switching (CIMS), consists in measuring the dynamics of the magnetization due to spin-polarized current injection. It is shown that two different mechanisms are operating. One can be described with a current dependent torque, and the other one is attributed to longitudinal spin-transfer.

AB - The usual charge carrier exploited in all electronic devices is the electron (and hole) and possesses hence, associated with its inertial masse, a spin degree of freedom. Manipulating spin-polarized electric current is the role devoted to Spintronics. Investigating the current induced magnetization switching (CIMS), consists in measuring the dynamics of the magnetization due to spin-polarized current injection. It is shown that two different mechanisms are operating. One can be described with a current dependent torque, and the other one is attributed to longitudinal spin-transfer.

KW - Giant magnetoresistance

KW - Magnetic RAM

KW - Magnetization reversal

KW - Nanotechnology

KW - Spin- injection

KW - Spin-current

KW - Spintronics

KW - Template synthesis

U2 - 10.1117/12.475405

DO - 10.1117/12.475405

M3 - Conference article

AN - SCOPUS:0141455319

SN - 0277-786X

VL - 4999

SP - 48

EP - 58

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Quantum Sensing: Evolution and Revolution from Past to Future

Y2 - 27 January 2003 through 30 January 2003

ER -

Spin injection induced magnetization reversal

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