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Spontaneous emission in emitting-layer-embedded one-dimensional photonic band-gap structures

  • Département Electronique
  • CNRS SAMOVAR UMR 5157
  • Centre de Nanosciences et de Nanotechnologies
  • Dept. Traitement du Signal
  • Telecom Paris
  • Université Paris-Sud

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

We show that the spontaneous-emission behavior of an emitter-embedded periodic photonic band-gap (PBG) stack, described in general on the basis of the approximation of dipole emission, can be considerably modified if the macroscopic features of the emitter are considered. We have developed a model which takes into account the optical thickness of the emitter in the usual formalism. The extended model is presented in comparison with the classical dipoleemission model. Some numerical results are given and discussed, by using GaAs-embedded SiO2/TiO2-coated quarter-wave stacks as a specific configuration. Our model provides quantitative arguments for optimization of spontaneous-emission power in terms of radiation frequency and emitter localization. It can be directly applied to optimum design of more complex systems, such as multi-emitter-embedded periodic stacks and any other passive structure.

langue originaleAnglais
Numéro d'article55
Pages (de - à)465-472
Nombre de pages8
journalProceedings of SPIE - The International Society for Optical Engineering
Volume5450
Les DOIs
étatPublié - 1 déc. 2004
Modification externeOui
EvénementPhotonic Crystal Materials and Nanostructures - Strasbourg, France
Durée: 27 avr. 2004 → 29 avr. 2004

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