Strong visible and near-infrared electroluminescence and formation process in Si-rich polymorphous silicon carbon

We report here a strong and stable electroluminescence (EL) from Si-rich hydrogenated polymorphous silicon carbon thin films (pm-Si _1-xC _x : H) fabricated in a plasma-enhanced chemical vapor deposition system. We investigate an unusual forming process in the pm-Si _1-xC _x : H thin films, during initial EL stressing, and propose a current-stress-induced phase separation process for the formation of new Si nanoclusters, which give rise to strongly enhanced emissions in both visible and near infrared ranges at 1.8-2.1 eV and 0.8-1.2 eV, respectively. The sub-crystalline-Si-bandgap emission is particularly attractive to realize a Si-based multi-band light source for optical interconnection and telecommunication.