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Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

  • Chang Hyun Kim
  • , Htay Hlaing
  • , Marcia M. Payne
  • , Kevin G. Yager
  • , Yvan Bonnassieux
  • , Gilles Horowitz
  • , John E. Anthony
  • , Ioannis Kymissis
  • Institut polytechnique de Paris
  • Columbia University
  • Center for Applied Energy Research
  • Brookhaven National Laboratory

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

langue originaleAnglais
Pages (de - à)2913-2916
Nombre de pages4
journalChemPhysChem
Volume15
Numéro de publication14
Les DOIs
étatPublié - 6 oct. 2014

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