TY - GEN
T1 - Study of 1/f and generation-recombination noise in four gate transistors
AU - Luque Rodríguez, A.
AU - Jiménez Tejada, J. A.
AU - Marun González, M.
AU - Reverto Planes, M.
AU - López Varo, P.
AU - Godoy, A.
PY - 2011/9/19
Y1 - 2011/9/19
N2 - In this work, we study different noise sources that are present in four-gate field-effect-transistors (G4-FET). We present a model for the generation-recombination (g-r) noise due to traps located in the depletion regions and in the bulk, and for the 1/f noise due to traps in the top and bottom oxides. One of the main advantages of this structure is that the position and size of the conduction channel can be controlled by the application of adequate voltages to its gates (front and back MOS gates and two lateral JFET gates). However, the channel is also prone to be affected by the noise sources distributed throughout the device. Thus, the current noise power spectral density is a combination of all these noise sources. Experimental data showing such a combination are interpreted with our model.
AB - In this work, we study different noise sources that are present in four-gate field-effect-transistors (G4-FET). We present a model for the generation-recombination (g-r) noise due to traps located in the depletion regions and in the bulk, and for the 1/f noise due to traps in the top and bottom oxides. One of the main advantages of this structure is that the position and size of the conduction channel can be controlled by the application of adequate voltages to its gates (front and back MOS gates and two lateral JFET gates). However, the channel is also prone to be affected by the noise sources distributed throughout the device. Thus, the current noise power spectral density is a combination of all these noise sources. Experimental data showing such a combination are interpreted with our model.
KW - 1/f noise
KW - Four-gate transistor
KW - generation-recombination noise
UR - https://www.scopus.com/pages/publications/80052783826
U2 - 10.1109/ICNF.2011.5994322
DO - 10.1109/ICNF.2011.5994322
M3 - Conference contribution
AN - SCOPUS:80052783826
SN - 9781457701924
T3 - Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
SP - 283
EP - 286
BT - Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
T2 - 21st International Conference on Noise and Fluctuations, ICNF 2011
Y2 - 12 June 2011 through 16 June 2011
ER -