Study of GeYSi1 - Y:H films deposited by low frequency plasma

L. Sanchez; A. Kosarev; A. Torres; A. Ilinskii; Y. Kudriavtsev; R. Asomoza; P. Roca I. Cabarrocas; A. Abramov

doi:10.1016/j.tsf.2006.11.100

Study of Ge_YSi_{1 - Y}:H films deposited by low frequency plasma

L. Sanchez
, A. Kosarev
, A. Torres
, A. Ilinskii
, Y. Kudriavtsev
, R. Asomoza
, P. Roca I. Cabarrocas
, A. Abramov

Instituto Nacional de Astrofísica Óptica y Electrónica (INAOE)
Benemerita Universidad Autonoma de Puebla
CINVESTAV-IPN
Institut polytechnique de Paris

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

7 Citations (Scopus)

Résumé

In this work, we report a study of the optical properties measured through spectral transmission and spectroscopic ellipsometry in Ge:H and Ge_YSi_{1 - Y}:H (Y ≈ 0.97) films deposited by low frequency (LF) PE CVD with hydrogen (H) dilution. The dilution was varied in the range of R = 20 to 80. It was observed that H-dilution influences in a different way on the interface and bulk optical properties, which also depend on incorporation of silicon. The films with low band tail characterized by its Urbach energy, E_U, and defect absorption, α_D, have been obtained in Ge:H films for R = 50 with E_U = 0.040 eV and α_D = 2 × 10³ cm^{- 1} (hν ≈ 1.04 eV), and in Ge_YSi_{1 - Y}:H films for R=75 with E_U = 0.030 eV and α_D = 5 × 10² cm^{- 1} (hν ≈ 1.04 eV).

langue originale	Anglais
Pages (de - à)	7603-7606
Nombre de pages	4
journal	Thin Solid Films
Volume	515
Numéro de publication	19 SPEC. ISS.
Les DOIs	https://doi.org/10.1016/j.tsf.2006.11.100
état	Publié - 16 juil. 2007

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10.1016/j.tsf.2006.11.100

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@article{14a8a48487c44a599d9af917bb61ab74,

title = "Study of GeYSi1 - Y:H films deposited by low frequency plasma",

abstract = "In this work, we report a study of the optical properties measured through spectral transmission and spectroscopic ellipsometry in Ge:H and GeYSi1 - Y:H (Y ≈ 0.97) films deposited by low frequency (LF) PE CVD with hydrogen (H) dilution. The dilution was varied in the range of R = 20 to 80. It was observed that H-dilution influences in a different way on the interface and bulk optical properties, which also depend on incorporation of silicon. The films with low band tail characterized by its Urbach energy, EU, and defect absorption, αD, have been obtained in Ge:H films for R = 50 with EU = 0.040 eV and αD = 2 × 103 cm- 1 (hν ≈ 1.04 eV), and in GeYSi1 - Y:H films for R=75 with EU = 0.030 eV and αD = 5 × 102 cm- 1 (hν ≈ 1.04 eV).",

keywords = "Amorphous materials, Germanium, Optical properties, Plasma processing and deposition, Silicon",

author = "L. Sanchez and A. Kosarev and A. Torres and A. Ilinskii and Y. Kudriavtsev and R. Asomoza and Cabarrocas, \{P. Roca I.\} and A. Abramov",

year = "2007",

month = jul,

day = "16",

doi = "10.1016/j.tsf.2006.11.100",

language = "English",

volume = "515",

pages = "7603--7606",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "19 SPEC. ISS.",

}

TY - JOUR

T1 - Study of GeYSi1 - Y:H films deposited by low frequency plasma

AU - Sanchez, L.

AU - Kosarev, A.

AU - Torres, A.

AU - Ilinskii, A.

AU - Kudriavtsev, Y.

AU - Asomoza, R.

AU - Cabarrocas, P. Roca I.

AU - Abramov, A.

PY - 2007/7/16

Y1 - 2007/7/16

N2 - In this work, we report a study of the optical properties measured through spectral transmission and spectroscopic ellipsometry in Ge:H and GeYSi1 - Y:H (Y ≈ 0.97) films deposited by low frequency (LF) PE CVD with hydrogen (H) dilution. The dilution was varied in the range of R = 20 to 80. It was observed that H-dilution influences in a different way on the interface and bulk optical properties, which also depend on incorporation of silicon. The films with low band tail characterized by its Urbach energy, EU, and defect absorption, αD, have been obtained in Ge:H films for R = 50 with EU = 0.040 eV and αD = 2 × 103 cm- 1 (hν ≈ 1.04 eV), and in GeYSi1 - Y:H films for R=75 with EU = 0.030 eV and αD = 5 × 102 cm- 1 (hν ≈ 1.04 eV).

AB - In this work, we report a study of the optical properties measured through spectral transmission and spectroscopic ellipsometry in Ge:H and GeYSi1 - Y:H (Y ≈ 0.97) films deposited by low frequency (LF) PE CVD with hydrogen (H) dilution. The dilution was varied in the range of R = 20 to 80. It was observed that H-dilution influences in a different way on the interface and bulk optical properties, which also depend on incorporation of silicon. The films with low band tail characterized by its Urbach energy, EU, and defect absorption, αD, have been obtained in Ge:H films for R = 50 with EU = 0.040 eV and αD = 2 × 103 cm- 1 (hν ≈ 1.04 eV), and in GeYSi1 - Y:H films for R=75 with EU = 0.030 eV and αD = 5 × 102 cm- 1 (hν ≈ 1.04 eV).

KW - Amorphous materials

KW - Germanium

KW - Optical properties

KW - Plasma processing and deposition

KW - Silicon

U2 - 10.1016/j.tsf.2006.11.100

DO - 10.1016/j.tsf.2006.11.100

M3 - Article

AN - SCOPUS:34547610336

SN - 0040-6090

VL - 515

SP - 7603

EP - 7606

JO - Thin Solid Films

JF - Thin Solid Films

IS - 19 SPEC. ISS.

ER -

Study of GeYSi1 - Y:H films deposited by low frequency plasma

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Study of Ge_YSi_{1 - Y}:H films deposited by low frequency plasma