Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements

W. Favre; M. Labrune; F. Dadouche; A. S. Gudovskikh; P. Roca I Cabarrocas; J. P. Kleider

doi:10.1002/pssc.200982800

Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements

W. Favre
, M. Labrune
, F. Dadouche
, A. S. Gudovskikh
, P. Roca I Cabarrocas
, J. P. Kleider

Université Paris-Sud 11
Institut polytechnique de Paris
Total
Institute of Bioorganic Chemistry

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

17 Citations (Scopus)

Résumé

We have previously shown from static planar conductance measurements that a strong inversion layer does exist in c-Si at the (n) a-Si:H/ (p) c-Si interface. This allowed us to determine the conduction band offset with a good precision (ΔE_C = 0.15 +/- 0.04 eV). The same technique is now applied to study (p) a-Si:H/ (n) c-Si interfaces. We demonstrate that a strong inversion layer (of holes) also exists at the c-Si surface of this hetero-interface. Analysis of our planar conductance data with the help of numerical simulations allows us to set a lower limit to the valence band offset, ΔE_V = E_V,a-Si:H - E_{V, c-Si} : ΔE_V> 0.28 eV.

langue originale	Anglais
Pages (de - à)	1037-1040
Nombre de pages	4
journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Numéro de publication	3-4
Les DOIs	https://doi.org/10.1002/pssc.200982800
état	Publié - 1 janv. 2010
Evénement	23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Pays-Bas Durée: 23 août 2009 → 28 août 2009

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10.1002/pssc.200982800

Contient cette citation

Favre, W., Labrune, M., Dadouche, F., Gudovskikh, A. S., Roca I Cabarrocas, P., & Kleider, J. P. (2010). Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements. Physica Status Solidi (C) Current Topics in Solid State Physics, 7(3-4), 1037-1040. https://doi.org/10.1002/pssc.200982800

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title = "Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements",

abstract = "We have previously shown from static planar conductance measurements that a strong inversion layer does exist in c-Si at the (n) a-Si:H/ (p) c-Si interface. This allowed us to determine the conduction band offset with a good precision (ΔEC = 0.15 +/- 0.04 eV). The same technique is now applied to study (p) a-Si:H/ (n) c-Si interfaces. We demonstrate that a strong inversion layer (of holes) also exists at the c-Si surface of this hetero-interface. Analysis of our planar conductance data with the help of numerical simulations allows us to set a lower limit to the valence band offset, ΔEV = EV,a-Si:H - EV, c-Si : ΔEV> 0.28 eV.",

author = "W. Favre and M. Labrune and F. Dadouche and Gudovskikh, \{A. S.\} and \{Roca I Cabarrocas\}, P. and Kleider, \{J. P.\}",

year = "2010",

month = jan,

day = "1",

doi = "10.1002/pssc.200982800",

language = "English",

volume = "7",

pages = "1037--1040",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

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number = "3-4",

note = "23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 ; Conference date: 23-08-2009 Through 28-08-2009",

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Favre, W, Labrune, M, Dadouche, F, Gudovskikh, AS, Roca I Cabarrocas, P & Kleider, JP 2010, 'Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements', Physica Status Solidi (C) Current Topics in Solid State Physics, VOL. 7, Numéro 3-4, p. 1037-1040. https://doi.org/10.1002/pssc.200982800

Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements. / Favre, W.; Labrune, M.; Dadouche, F. et al.
Dans: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol 7, Numéro 3-4, 01.01.2010, p. 1037-1040.

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

TY - JOUR

T1 - Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements

AU - Favre, W.

AU - Labrune, M.

AU - Dadouche, F.

AU - Gudovskikh, A. S.

AU - Roca I Cabarrocas, P.

AU - Kleider, J. P.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - We have previously shown from static planar conductance measurements that a strong inversion layer does exist in c-Si at the (n) a-Si:H/ (p) c-Si interface. This allowed us to determine the conduction band offset with a good precision (ΔEC = 0.15 +/- 0.04 eV). The same technique is now applied to study (p) a-Si:H/ (n) c-Si interfaces. We demonstrate that a strong inversion layer (of holes) also exists at the c-Si surface of this hetero-interface. Analysis of our planar conductance data with the help of numerical simulations allows us to set a lower limit to the valence band offset, ΔEV = EV,a-Si:H - EV, c-Si : ΔEV> 0.28 eV.

AB - We have previously shown from static planar conductance measurements that a strong inversion layer does exist in c-Si at the (n) a-Si:H/ (p) c-Si interface. This allowed us to determine the conduction band offset with a good precision (ΔEC = 0.15 +/- 0.04 eV). The same technique is now applied to study (p) a-Si:H/ (n) c-Si interfaces. We demonstrate that a strong inversion layer (of holes) also exists at the c-Si surface of this hetero-interface. Analysis of our planar conductance data with the help of numerical simulations allows us to set a lower limit to the valence band offset, ΔEV = EV,a-Si:H - EV, c-Si : ΔEV> 0.28 eV.

U2 - 10.1002/pssc.200982800

DO - 10.1002/pssc.200982800

M3 - Conference article

AN - SCOPUS:77952568344

SN - 1862-6351

VL - 7

SP - 1037

EP - 1040

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

T2 - 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23

Y2 - 23 August 2009 through 28 August 2009

ER -

Study of the interfacial properties of amorphous silicon/n-type crystalline silicon heterojunction through static planar conductance measurements

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