Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

L. Hamui; B. M. Monroy; P. Roca I Cabarrocas; G. Santana

doi:10.1109/PVSC.2014.6925026

Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

L. Hamui
, B. M. Monroy
, P. Roca I Cabarrocas
, G. Santana

Universidad Nacional Autónoma de México

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.

langue originale	Anglais
titre	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	737-741
Nombre de pages	5
ISBN (Electronique)	9781479943982
Les DOIs	https://doi.org/10.1109/PVSC.2014.6925026
état	Publié - 15 oct. 2014
Evénement	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, États-Unis Durée: 8 juin 2014 → 13 juin 2014

Série de publications

Nom	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Une conférence

Une conférence	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Pays/Territoire	États-Unis
La ville	Denver
période	8/06/14 → 13/06/14

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10.1109/PVSC.2014.6925026

Contient cette citation

Hamui, L., Monroy, B. M., Roca I Cabarrocas, P., & Santana, G. (2014). Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. Dans 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (p. 737-741). Article 6925026 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925026

Hamui, L. ; Monroy, B. M. ; Roca I Cabarrocas, P. et al. / Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 737-741 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

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title = "Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures",

abstract = "This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.",

keywords = "Photovoltaic structures, polymorphous silicon, raman, spectroscopic ellipsometry, thin films",

author = "L. Hamui and Monroy, \{B. M.\} and \{Roca I Cabarrocas\}, P. and G. Santana",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925026",

language = "English",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Hamui, L, Monroy, BM, Roca I Cabarrocas, P & Santana, G 2014, Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. Dans 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925026, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., p. 737-741, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, États-Unis, 8/06/14. https://doi.org/10.1109/PVSC.2014.6925026

Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. / Hamui, L.; Monroy, B. M.; Roca I Cabarrocas, P. et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 737-741 6925026 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

AU - Hamui, L.

AU - Monroy, B. M.

AU - Roca I Cabarrocas, P.

AU - Santana, G.

PY - 2014/10/15

Y1 - 2014/10/15

N2 - This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.

AB - This work describes a study performed on pm-Si:H PIN and NIP structures, deposited by PECVD. We show the effect of light-soaking (AM1.5) on pm-Si:H thin films structures optical properties. We propose a model for long range diffusion of hydrogen through the whole device. From the evolution of Raman spectra after annealing, we show that this long range motion of hydrogen causes a hydrogen rearrangement on the film along with a shift on the exodiffusion peaks explaining the degradation process in this type of devices. As a result we determined that for the PIN structure a hydrogen diffusion barrier is generated by defects, which causes a less degradation of its optoelectronic properties under illumination, and a more stable device during operation is expected.

KW - Photovoltaic structures

KW - polymorphous silicon

KW - raman

KW - spectroscopic ellipsometry

KW - thin films

U2 - 10.1109/PVSC.2014.6925026

DO - 10.1109/PVSC.2014.6925026

M3 - Conference contribution

AN - SCOPUS:84912140759

T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

SP - 737

EP - 741

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Hamui L, Monroy BM, Roca I Cabarrocas P, Santana G. Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures. Dans 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 737-741. 6925026. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925026

Study of the previous light-soaking effect on annealed hydrogenated polymorphous silicon solar cells structures

Résumé

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SDG des Nations Unies

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